scholarly journals Influence of Deposition Time on the Microstructure and Transport Properties of CdO Thin Films Prepared by Chemical Bath Deposition

Author(s):  
P. Perumal ◽  
A. Gowri Manohari ◽  
Santiyagu Valanarasu ◽  
Adaikalam Kathalingam ◽  
Jin-Koo Rhee ◽  
...  
2018 ◽  
Vol 12 ◽  
pp. 135-144 ◽  
Author(s):  
M. Ashaduzzman ◽  
M.K.R. Khan ◽  
A.M.M. Tanveer Karim ◽  
M. Mozibur Rahman

2006 ◽  
Vol 60 (29-30) ◽  
pp. 3866-3870 ◽  
Author(s):  
L.R. de León-Gutiérrez ◽  
J.J. Cayente-Romero ◽  
J.M. Peza-Tapia ◽  
E. Barrera-Calva ◽  
J.C. Martínez-Flores ◽  
...  

1970 ◽  
Vol 25 ◽  
pp. 2-8 ◽  
Author(s):  
K Anuar ◽  
W. T. Tan ◽  
N. Saravanan ◽  
L. K. Khor ◽  
S. M. Ho

The chemical bath deposition technique was used to deposit thin films of coppersulphide onto indium tin oxide glass substrates. The bath composition included copperchloride which was the source of Cu2+ and sodium thiosulfate which supplied the S2- ions. Xraydiffraction and atomic force microscopy were used to investigate structural andmorphological characterization, respectively. The influence of deposition time was studiedto determine the optimum condition for deposition process. The deposited CuS films showedhexagonal structure. The number of peaks attributable to CuS increased as the depositiontime was increased to 16 hours based on XRD data. AFM images revealed that the chemicalbath-deposited films for 16 hours showed more homogeneous and uniform compared withother deposition times, and the highest absorbance value was obtained for the filmsdeposited at this period. The band gap energy decreased from 2.9 to 2.45 eV when thedeposition time was increased from 8 to 20 hours.Keywords: Chemical bath deposition, copper sulphide, thin films, solar cells.DOI: 10.3126/jncs.v25i0.3276Journal of Nepal Chemical Society Volume 25, 2010 pp 2-8


2004 ◽  
Vol 18 (22) ◽  
pp. 3063-3069 ◽  
Author(s):  
AL-MAMUN ◽  
A. B. M. O. ISLAM

In this article, a low cost chemical bath deposition (CBD) technique has been used for the preparation of Cu 2-x Se thin films on to glass substrate. Different thin films (0.2–0.6 μm) were prepared by adjusting the bath parameter like concentration of ammonia, deposition time, temperature of the solution, and the ratios of the mixing composition between copper and selenium in the reaction bath. From these studies, it reveals that at low concentration of ammonia or TEA, the terminal thicknesses of the films are less, which gradually increases with the increase of concentrations and then drop down at still higher concentrations. It has been found that complexing the Cu 2+ ions with TEA first, and then addition of ammonia yields better results than the reverse process. The film thickness increases with the decrease of value x of Cu 2-x Se .


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