scholarly journals Effect of a TiO2Buffer Layer on the Properties of ITO Films Prepared by RF Magnetron Sputtering

2013 ◽  
Vol 14 (5) ◽  
pp. 242-245 ◽  
Author(s):  
Daeil Kim
Keyword(s):  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Ito Films

INFLUENCE OF SUBSTRATE TEMPERATURE ON STRUCTURAL, ELECTRICAL AND OPTICAL PROPERTIES OF ITO THIN FILMS PREPARED BY RF MAGNETRON SPUTTERING

2013 ◽  
Vol 20 (05) ◽  
pp. 1350045 ◽  
Author(s):  
BO HE ◽  
LEI ZHAO ◽  
JING XU ◽  
HUAIZHONG XING ◽  
SHAOLIN XUE ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Visible Region ◽  
Rf Magnetron Sputtering ◽  
Electrical And Optical Properties ◽  
High Quantum Efficiency ◽  
Ito Thin Films ◽  
Ito Films

In this paper, we investigated indium-tin-oxide (ITO) thin films on glass substrates deposited by RF magnetron sputtering using ceramic target to find the optimal condition for fabricating optoelectronic devices. The structural, electrical and optical properties of the ITO films prepared at various substrate temperatures were investigated. The results indicate the grain size increases with substrate temperature increases. As the substrate temperature grew up, the resistivity of ITO films greatly decreased. The ITO film possesses high quality in terms of electrode functions, when substrate temperature is 480°C. The resistivity is as low as 9.42 × 10-5 Ω• cm , while the carrier concentration and mobility are as high as 3.461 × 1021 atom∕cm3 and 19.1 cm2∕V⋅s, respectively. The average transmittance of the film is about 95% in the visible region. The novel ITO/np-Silicon frame, which prepared by RF magnetron sputtering at 480°C substrate temperature, can be used not only for low-cost solar cell, but also for high quantum efficiency of UV and visible lights enhanced photodetector for various applications.

ITO films deposited on water-cooled flexible substrate by bias RF Magnetron Sputtering

2000 ◽  
Vol 161 (1-2) ◽  
pp. 279-285 ◽  
Author(s):  
Zhiwei Yang ◽  
Shenghao Han ◽  
Tianlin Yang ◽  
Lina Ye ◽  
Honglei Ma ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Flexible Substrate ◽  
Rf Magnetron Sputtering ◽  
Ito Films

Studying on Thickness Control of ITO Films Deposited Using RF Magnetron Sputtering

2011 ◽  
Vol 415-417 ◽  
pp. 1921-1924
Author(s):  
Wei Hong Ma ◽  
Chang Long Cai
Keyword(s):  
Magnetron Sputtering ◽  
Deposition Rate ◽  
Indium Tin Oxide ◽  
Rf Magnetron Sputtering ◽  
Transparent Electrode ◽  
Rf Power ◽  
Photoelectric Device ◽  
Sputtering Pressure ◽  
Oxygen Ratio ◽  
Ito Films

Indium tin oxide (ITO) films are widely applied as the transparent electrode in the photoelectric device because of its high conductivity and high transmittance in the visible wavelength. But the resistivity and position of transmittance peak of ITO films were influenced by the thickness of ITO films, so it is important significant to study the deposition rate of ITO films deposited using RF magnetron sputtering. In this paper, ITO films were prepared by RF magnetron sputtering method on K9 glass substrate, the influence of RF power, sputtering pressure, oxygen ratio, and substrate temperature on the deposition rate of ITO films was mainly studied, meanwhile, the influence of annealing temperature on the film thickness and the process stability depositing ITO using RF magnetron sputtering was studied, and the influence mechanism of technique parameters was analyzed.

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