scholarly journals Preparing Conductive Transparent ITO Films by RF Magnetron Sputtering with Low Self Bias Voltage and Study on its Self Bias.

Shinku ◽  
2001 ◽  
Vol 44 (8) ◽  
pp. 747-750 ◽  
Author(s):  
Tadashi ISHIDA
Coatings ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 911
Author(s):  
Wei Dai ◽  
Yunzhan Shi

TaNx coatings were deposited by RF magnetron sputtering with different bias voltages. The growth morphology, crystalline structure, chemical bond structure, hardness and elastic modulus, adhesion strength and tribological performance of the coatings were studied as a function of the bias voltage. The results showed that an increasing bias voltage refines the coating grains and facilitates structure densification. Simultaneously, the structure of the TaNx coatings transfers from a composite structure consisting of TaN and Ta2N crystals, through a single composite mainly composed of the Ta2N crystal, to an amorphous structure as the bias voltage increases from low to high, indicating that the phase composition of the TaNx coatings can be varied by the bias voltage. The coating composed of Ta2N crystal showed a good overall performance including enhanced hardness, enhanced adhesive strength, and good tribological performance with enhanced wear resistance and a low friction coefficient of 0.18.


2001 ◽  
Vol 118 (4) ◽  
pp. 179-182 ◽  
Author(s):  
O. Durand-Drouhin ◽  
M. Lejeune ◽  
M. Clin ◽  
D. Ballutaud ◽  
M. Benlahsen

2013 ◽  
Vol 20 (05) ◽  
pp. 1350045 ◽  
Author(s):  
BO HE ◽  
LEI ZHAO ◽  
JING XU ◽  
HUAIZHONG XING ◽  
SHAOLIN XUE ◽  
...  

In this paper, we investigated indium-tin-oxide (ITO) thin films on glass substrates deposited by RF magnetron sputtering using ceramic target to find the optimal condition for fabricating optoelectronic devices. The structural, electrical and optical properties of the ITO films prepared at various substrate temperatures were investigated. The results indicate the grain size increases with substrate temperature increases. As the substrate temperature grew up, the resistivity of ITO films greatly decreased. The ITO film possesses high quality in terms of electrode functions, when substrate temperature is 480°C. The resistivity is as low as 9.42 × 10-5 Ω• cm , while the carrier concentration and mobility are as high as 3.461 × 1021 atom∕cm3 and 19.1 cm2∕V⋅s, respectively. The average transmittance of the film is about 95% in the visible region. The novel ITO/np-Silicon frame, which prepared by RF magnetron sputtering at 480°C substrate temperature, can be used not only for low-cost solar cell, but also for high quantum efficiency of UV and visible lights enhanced photodetector for various applications.


2009 ◽  
Vol 204 (5) ◽  
pp. 713-717 ◽  
Author(s):  
Chunqiang Zhuang ◽  
Jijun Zhao ◽  
Fuchao Jia ◽  
Changyu Guan ◽  
Zhanling Wu ◽  
...  

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