Preparation of high quality ITO films on a plastic substrate using RF magnetron sputtering

2006 ◽  
Vol 201 (3-4) ◽  
pp. 927-931 ◽  
Author(s):  
Dong-Ho Kim ◽  
Mi-Rang Park ◽  
Gun-Hwan Lee
Keyword(s):  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Plastic Substrate ◽  
High Quality ◽  
Ito Films

INFLUENCE OF SUBSTRATE TEMPERATURE ON STRUCTURAL, ELECTRICAL AND OPTICAL PROPERTIES OF ITO THIN FILMS PREPARED BY RF MAGNETRON SPUTTERING

2013 ◽  
Vol 20 (05) ◽  
pp. 1350045 ◽  
Author(s):  
BO HE ◽  
LEI ZHAO ◽  
JING XU ◽  
HUAIZHONG XING ◽  
SHAOLIN XUE ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Visible Region ◽  
Rf Magnetron Sputtering ◽  
Electrical And Optical Properties ◽  
High Quantum Efficiency ◽  
Ito Thin Films ◽  
Ito Films

In this paper, we investigated indium-tin-oxide (ITO) thin films on glass substrates deposited by RF magnetron sputtering using ceramic target to find the optimal condition for fabricating optoelectronic devices. The structural, electrical and optical properties of the ITO films prepared at various substrate temperatures were investigated. The results indicate the grain size increases with substrate temperature increases. As the substrate temperature grew up, the resistivity of ITO films greatly decreased. The ITO film possesses high quality in terms of electrode functions, when substrate temperature is 480°C. The resistivity is as low as 9.42 × 10-5 Ω• cm , while the carrier concentration and mobility are as high as 3.461 × 1021 atom∕cm3 and 19.1 cm2∕V⋅s, respectively. The average transmittance of the film is about 95% in the visible region. The novel ITO/np-Silicon frame, which prepared by RF magnetron sputtering at 480°C substrate temperature, can be used not only for low-cost solar cell, but also for high quantum efficiency of UV and visible lights enhanced photodetector for various applications.

Improved Electrical and Optical Properties of Ultra-Thin Tin Doped Indium Oxide (ITO) Thin Films by a 3-Dimensionally Confined Magnetron Sputtering Source

2021 ◽  
Vol 13 (8) ◽  
pp. 1498-1505
Author(s):  
Long Wen ◽  
Bibhuti-B Sahu ◽  
Jeon-Geon Han ◽  
Geun-Young Yeom
Keyword(s):  
Magnetron Sputtering ◽  
Indium Oxide ◽  
Oxygen Vacancies ◽  
Discharge Voltage ◽  
Processing Temperature ◽  
High Quality ◽  
Electrical And Optical Properties ◽  
Ito Thin Films ◽  
Ito Films

The ultra-thin tin doped crystalline indium oxide (ITO) films (≤50 nm) were successfully deposited by a 3-dimensionally confined magnetron sputtering source (L-3DMS) at the temperature lower than 100 °C. The resistivity and the mobility of the ultra-thin ITO films deposited at a low processing temperature were about ~5 × 10−4 Ω · cm and >30 cm2/Vs, respectively, for the thickness of 30 nm. The high quality of the ultra-thin ITO films deposited by L-3DMS is believed to be related to the improved crystallinity with oxygen vacancies of the ITO films by high density plasma and low discharge voltage of the L-3DMS which enables the formation of a crystalline structure a low processing temperature.

ITO films deposited on water-cooled flexible substrate by bias RF Magnetron Sputtering

2000 ◽  
Vol 161 (1-2) ◽  
pp. 279-285 ◽  
Author(s):  
Zhiwei Yang ◽  
Shenghao Han ◽  
Tianlin Yang ◽  
Lina Ye ◽  
Honglei Ma ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Flexible Substrate ◽  
Rf Magnetron Sputtering ◽  
Ito Films
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