scholarly journals CONTROL OF IONIZATION PROCESSES IN MAGNETRON SPUTTERING SYSTEM BY CHANGING MAGNETIC FIELD CONFIGURATION

2021 ◽  
pp. 102-105
Author(s):  
А.G. Chunadra ◽  
К.N. Sereda ◽  
I.K. Tarasov ◽  
V.A. Makhlai
Keyword(s):  
Magnetron Sputtering ◽  
Discharge Plasma ◽  
Potential Effect ◽  
Field Configuration ◽  
Distribution Functions ◽  
Magnetic Field Configuration ◽  
Cathode Sputtering ◽  
Gas Discharge Plasma ◽  
Selection Of ◽  
Sputtering System

This work is devoted to measuring the function of the distribution of charged particles of gas-discharge plasma in a magnetron sputtering system under conditions of non-potential "earth". Measurements are carried out with the help of a three-electrode probe, which is installed in the cathode sputtering zone, with unsafe electrodes and housing. The selection of the analyzed particles was carried out through a screen located under floating potential. Effect of additional magnetic insulation anode of MSS МАG-5 on ion and electron distribution functions was investigated.

Highly Oriented Yba2Cu3O7-X Thin Films Prepared by Unbalanced Dc Magnetron Sputtering From a Single Stoichiometric Target

1989 ◽  
Vol 169 ◽  
Author(s):  
N. Savvides ◽  
C. Andrikidis ◽  
D.V. Hensley ◽  
R. Drivers ◽  
J-C Macfarlane ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Activation Energy ◽  
Magnetron Sputtering ◽  
Stoichiometric Composition ◽  
Field Configuration ◽  
Creep Model ◽  
Dc Magnetron Sputtering ◽  
Magnetic Field Configuration ◽  
Single Target ◽  
Oriented Films

AbstractHighly oriented films of YBa2Cu3O7‐x have been reproducibly prepared with the correct metal stoichiometry by dc magnetron sputtering from a single target of stoichiometric composition. To circumvent the resputtering effects, the magnetron used an unbalanced magnetic field configuration to direct the plasma away from the substrate. Typical films have sharp superconducting transitions with Tc up to 93 K and △TC(90%.‐10%.)=0.5 K, metallic resistivity above the transition with ρ300/ρ100=2‐4, and Jc>1.5xl06 A cm‐2 at 4.2 K. The temperature dependence of J,. obeys the flux creep model with activation energy U(0)=75 meV.

Photoelectrical Properties of Semiconductor in Contact with Gas Discharge Plasma

1997 ◽  
Vol 7 (5) ◽  
pp. 1039-1044
Author(s):  
N. N. Lebedeva ◽  
V. I. Orbukh ◽  
B. G. Salamov ◽  
M. Özer ◽  
K. Çolakoǧlu ◽  
...  
Keyword(s):  
Discharge Plasma ◽  
Gas Discharge ◽  
Gas Discharge Plasma ◽  
Photoelectrical Properties

HOLOGRAPHIC TIME-DIFFERENTIAL CINE-IMERFEROMETRY OF THE GAS DISCHARGE PLASMA

1979 ◽  
Vol 40 (C7) ◽  
pp. C7-873-C7-874
Author(s):  
Yu. I. Filenko ◽  
B. M. Stepanov ◽  
L. S. Ushakov
Keyword(s):  
Discharge Plasma ◽  
Gas Discharge ◽  
Gas Discharge Plasma ◽  
Time Differential
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