scholarly journals KARAKTERISTIK STRUKTUR GEOLOGI DAN PERANANNYA TERHADAP SISTEM PANAS BUMI NAGE, KABUPATEN NGADA, PROVINSI NUSA TENGGARA TIMUR

2021 ◽  
Vol 16 (3) ◽  
pp. 186-199
Author(s):  
Devito Pradipta ◽  
Lano Adhitya Permana ◽  
Divi Muhammad Ramdhan
Keyword(s):  
Fault Density

Daerah Nage merupakan bagian dari jalur vulkanisme Busur Sunda-Banda yang membentuk rangkaian en-echelon di Pulau Flores. Tatanan tektonik regional di Pulau Flores yang cukup kompleks menyebabkan adanya struktur geologi yang intensif di daerah penelitian. Metode penelitian yang digunakan meliputi pengamatan struktur geologi melalui analisis kelurusan topografi, kelurusan sungai, fitur melingkar dan densitas kelurusan (fracture fault density) dengan menggunakan citra DEMNAS serta pengukuran secara langsung di lapangan terhadap unsur-unsur struktur geologi primer dan sekunder pada 87 stasiun pengamatan. Pengukuran terhadap 441 kedudukan struktur geologi di daerah penelitian, menunjukkan bahwa struktur geologi sekunder, utamanya berupa kekar gerus, yang berguna untuk membuktikan kehadiran sesar yang memotong batuan berumur Kuarter pada daerah penelitian. Hasil analisis kinematika menyimpulkan bahwa terdapat sesar geser oblik berarah baratlaut-selatan tenggara dan timurlaut-baratdaya serta sesar geser berarah timur laut-baratdaya. Daerah penelitian terdapat fitur melingkar yang berasosiasi dengan peruntuhan kaldera dan pembentukan kawah. Analisis dinamik sesar untuk menentukan arah tegasan kompresif menunjukkan bahwa daerah penelitian mengalami deformasi kompresional berarah utara timurlaut-selatan baratdaya dengan arah tegasan maksimum (σ1) 16°, N 203°E dan arah tegasan minimum (σ3) 17,5°, N 297,1°E. Keberadaan struktur sesar diinterpretasikan memiliki peran sebagai jalur fluida terhadap sistem panas bumi Nage yang tampak dari kehadiran manifestasi panas bumi dan alterasi hidrotermal. Berdasarkan konfigurasi sesar, manifestasi, dan alterasi hidrotermal disimpulkan bahwa setidaknya terdapat tiga aliran fluida, yakni aliran fluida hidrotermal yang naik melalui sesar F1 dan dibatasi sesar F3, aliran fluida yang naik melalui sesar F2, dan aliran fluida hasil pendidihan yang naik melalui F10.

GRAVITY ANOMALIES OF TWO‐DIMENSIONAL FAULTS

Geophysics ◽  
1966 ◽  
Vol 31 (2) ◽  
pp. 372-397 ◽  
Author(s):  
L. P. Geldart ◽  
Denis E. Gill ◽  
Bijon Sharma
Keyword(s):  
Fault Plane ◽  
Marked Effect ◽  
Gravity Anomalies ◽  
Two Dimensional ◽  
Gravity Effect ◽  
Fault Density ◽  
Wide Range ◽  
Bed Thickness ◽  
Two Sides ◽  
Simplified Formula

A simplified formula is given for the gravity effect of a horizontal semi‐infinite block truncated by a dipping plane. This formula is used to obtain curves illustrating the gravity anomalies for blocks having different thicknesses and depths truncated by planes dipping at various angles. By combining two blocks, results are obtained for faulted horizontal beds for a wide range of bed thicknesses and depths, fault displacements and dips. These should be useful as guides in interpreting fault anomalies, and in planning gravity programs intended to map faults. The most striking feature of the curves is the marked effect of the dip of the fault plane on the curves for faulted beds. The asymmetry of the fault curves is related mainly to the dip and can be used to determine dips between 30 and 90 degrees. If the dip of the fault, density contrast, and bed thickness are known, the depths to the bed on the two sides of the fault are given by the sizes and positions of the gravity maximum and minimum.

Micro-Raman spectroscopy for the detection of stacking fault density in InAs and GaAs nanowires

2017 ◽  
Vol 96 (16) ◽  
Author(s):  
Rawa Tanta ◽  
Caroline Lindberg ◽  
Sebastian Lehmann ◽  
Jessica Bolinsson ◽  
Miguel R. Carro-Temboury ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Stacking Fault ◽  
Micro Raman Spectroscopy ◽  
Fault Density ◽  
Gaas Nanowires

Optimization of 150 mm 4H SiC Substrate Crystal Quality

2018 ◽  
Vol 924 ◽  
pp. 11-14 ◽  
Author(s):  
Ian Manning ◽  
Gil Yong Chung ◽  
Edward Sanchez ◽  
Yu Yang ◽  
Jian Qiu Guo ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Marked Reduction ◽  
Stacking Faults ◽  
Continuous Optimization ◽  
Stacking Fault ◽  
Thermal Parameters ◽  
Crystal Quality ◽  
Growth Processes ◽  
Fault Density

Continuous optimization of bulk 4H SiC PVT crystal growth processes has yielded an improvement in 150 mm wafer shape, as well as a marked reduction in stacking fault density. Mean wafer bow and warp decreased by 26% and 14%, respectively, while stacking faults were nearly eliminated from wafers produced using the refined process. These quality enhancements corresponded to an adjustment to key thermal parameters predicted to control intrinsic crystal stresses, and a reduction in crystal dome curvature.

The Influence of the Temperature Gradient on the Defect Structure of 3C-SiC Grown Heteroepitaxially on 6H-SiC by Sublimation Epitaxy

2010 ◽  
Vol 645-648 ◽  
pp. 367-370 ◽  
Author(s):  
Maya Marinova ◽  
Alkyoni Mantzari ◽  
Milena Beshkova ◽  
Mikael Syväjärvi ◽  
Rositza Yakimova ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Temperature Gradient ◽  
Defect Structure ◽  
Temperature Gradients ◽  
Structural Quality ◽  
Fault Density ◽  
Transmission Electron

In the present work the structural quality of 3C-SiC layers grown by sublimation epitaxy is studied by means of conventional and high resolution transmission electron microscopy. The layers were grown on Si-face 6H-SiC nominally on-axis substrates at a temperature of 2000°C and different temperature gradients, ranging from 5 to 8 °C /mm. The influence of the temperature gradient on the structural quality of the layers is discussed. The formation of specific twin complexes and conditions for lower stacking fault density are investigated.

Interface composition and stacking fault density in II-VI/III-V heterostructures

1997 ◽  
Vol 70 (2) ◽  
pp. 237-239 ◽  
Author(s):  
S. Heun ◽  
J. J. Paggel ◽  
L. Sorba ◽  
S. Rubini ◽  
A. Franciosi ◽  
...  
Keyword(s):  
Stacking Fault ◽  
Interface Composition ◽  
Fault Density

scholarly journals Stacking fault density and bond orientational order of fcc ruthenium nanoparticles

2017 ◽  
Vol 111 (25) ◽  
pp. 253101 ◽  
Author(s):  
Okkyun Seo ◽  
Osami Sakata ◽  
Jae Myung Kim ◽  
Satoshi Hiroi ◽  
Chulho Song ◽  
...  
Keyword(s):  
Orientational Order ◽  
Stacking Fault ◽  
Ruthenium Nanoparticles ◽  
Fault Density ◽  
Bond Orientational Order
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