Photodetector devices based on PIN and barrier structures of the mid-wave IR range of the spectrum

Multilayer structures based on the antimonide group materials with absorber layers InSb or AlxIn1-XSb, and XBn-structures with AlxIn1-XSb barrier layer (InSb/AlxIn1-XSb/InSb), designed for the manufacture of advanced photosensitive devices detecting radiation in the medium-wave infrared (IR) range (MWIR), have been developed and investigated. Various topology photosensitive elements (PSE) with absorbing layers InSb or AlxIn1-XSb were fabricated on the basis of MBE-grown p–i–n and barrier structures. It is shown that wideband ternary al-loys AlxIn1-XSb are considered as an alternative to the narrowband binary compound InSb, since, due to wide-band material properties, photodiodes based on AlxIn1-XSb have lower dark currents, and, consequently, noise. The average values of detectivity D* and noise-equivalent temperature difference (NETD) have been measured for various topology photodetectors, so D* was more than 1011 cmW-1Hz1/2 in p–i–n-structures, and D* exceed of 1012 cmW-1Hz1/2 in barrier structures.