Magnetic-field CMOS microsensor for  low-energy electric discharge detection

Abstract. This paper addresses the development and characterization of a non-intrusive silicon-based microsensor, which can detect electric partial discharges in electrical insulation equipment. Early partial discharge detection prevents failures and can be used to optimize maintenance operations. Despite the potential that CMOS technology offers, miniaturized electric discharge detector has neither been investigated nor implemented, until now. The developed microsensor demonstrates its ability to record electric discharge emission thanks to the presence of a miniaturized planar inductor. The squared inductor of 50 turns with a side length of 1.5 mm used in our sensor has been fabricated on top of a silicon substrate in a CMOS technology. The total inductor wire length of loop antenna is 30 cm to achieve 100 MHz bandwidth. Using the microsensor at 1 cm from the discharge site, a damped sinusoidal induced voltage with an amplitude of 2 V has been measured at its output. We observed that the output signal spectrum is highly concentrated around a central resonance frequency, which remains constant. The main advantage of such design resides in its monolithic integration added to the high autonomy, which improves the microsensor efficiency.

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Analysis of an Anomalous Transistor Exhibiting Dual-Vt Characteristics and Its Cause in a 90nm Node CMOS Technology

ISTFA 2012: Conference Proceedings from the 38th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2012p0106 ◽

2012 ◽

Author(s):

Yuk L. Tsang ◽

Xiang D. Wang ◽

Reyhan Ricklefs ◽

Jason Goertz

Keyword(s):

Threshold Voltage ◽

Electrical Characterization ◽

Cmos Technology ◽

Short Channel ◽

Visual Defect ◽

Subthreshold Region ◽

Short Channel Effect ◽

Channel Effect ◽

Transistor Model

Abstract In this paper, we report a transistor model that has successfully led to the identification of a non visual defect. This model was based on detailed electrical characterization of a MOS NFET exhibiting a threshold voltage (Vt) of just about 40mv lower than normal. This small Vt delta was based on standard graphical extrapolation method in the usual linear Id-Vg plots. We observed, using a semilog plot, two slopes in the Id-Vg curves with Vt delta magnified significantly in the subthreshold region. The two slopes were attributed to two transistors in parallel with different Vts. We further found that one of the parallel transistors had short channel effect due to a punch-through mechanism. It was proposed and ultimately confirmed the cause was due to a dopant defect using scanning capacitance microscopy (SCM) technique.

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Correction to: Electrochemical Impedance Spectroscopy Characterization of Silicon-Based Electrodes for Li-Ion Batteries

Electrocatalysis ◽

10.1007/s12678-020-00597-9 ◽

2020 ◽

Vol 11 (3) ◽

pp. 364-364

Author(s):

Maciej Ratynski ◽

Bartosz Hamankiewicz ◽

Michał Krajewski ◽

Maciej Boczar ◽

Dominika A. Buchberger ◽

...

Keyword(s):

Electrochemical Impedance Spectroscopy ◽

Impedance Spectroscopy ◽

Electrochemical Impedance ◽

Li Ion Batteries ◽

Li Ion ◽

Silicon Based

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In-situ radionuclide characterization of a submarine groundwater discharge site at Kalogria Bay, Stoupa, Greece

Journal of Environmental Radioactivity ◽

10.1016/j.jenvrad.2011.08.005 ◽

2012 ◽

Vol 108 ◽

pp. 50-59 ◽

Cited By ~ 23

Author(s):

Christos Tsabaris ◽

Dionisis L. Patiris ◽

Aristomenis P. Karageorgis ◽

George Eleftheriou ◽

Vassilis P. Papadopoulos ◽

...

Keyword(s):

Submarine Groundwater Discharge ◽

Groundwater Discharge ◽

Submarine Groundwater ◽

Discharge Site

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Characterization of sub-THz detection array in 0.18 μm CMOS technology

2016 46th European Microwave Conference (EuMC) ◽

10.1109/eumc.2016.7824615 ◽

2016 ◽

Author(s):

Jixin Chen ◽

Weitian Liu ◽

Pinpin Yan ◽

Chenwei Jia ◽

Debing Hou ◽

...

Keyword(s):

Cmos Technology ◽

Thz Detection

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Silicon photonic devices for mid-infrared applications

Nanophotonics ◽

10.1515/nanoph-2013-0027 ◽

2014 ◽

Vol 3 (4-5) ◽

pp. 329-341 ◽

Cited By ~ 19

Author(s):

Raji Shankar ◽

Marko Lončar

Keyword(s):

Gas Sensing ◽

Wavelength Region ◽

Photonic Devices ◽

Ring Resonators ◽

Space Communications ◽

Mid Infrared ◽

Silicon Photonic ◽

Processing Techniques ◽

Silicon Based

AbstractThe mid-infrared (IR) wavelength region (2–20 µm) is of great interest for a number of applications, including trace gas sensing, thermal imaging, and free-space communications. Recently, there has been significant progress in developing a mid-IR photonics platform in Si, which is highly transparent in the mid-IR, due to the ease of fabrication and CMOS compatibility provided by the Si platform. Here, we discuss our group’s recent contributions to the field of silicon-based mid-IR photonics, including photonic crystal cavities in a Si membrane platform and grating-coupled high-quality factor ring resonators in a silicon-on-sapphire (SOS) platform. Since experimental characterization of microphotonic devices is especially challenging at the mid-IR, we also review our mid-IR characterization techniques in some detail. Additionally, pre- and post-processing techniques for improving device performance, such as resist reflow, Piranha clean/HF dip cycling, and annealing are discussed.

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New Self-Aligned Silicon Nanowire Transistors on Bulk Substrate Fabricated by Epi-Free Compatible CMOS Technology: Process Integration, Experimental Characterization of Carrier Transport and Low Frequency noise

2007 IEEE International Electron Devices Meeting ◽

10.1109/iedm.2007.4419094 ◽

2007 ◽

Cited By ~ 31

Author(s):

Yu Tian ◽

Ru Huang ◽

Yiqun Wang ◽

Jing Zhuge ◽

Runsheng Wang ◽

...

Keyword(s):

Carrier Transport ◽

Process Integration ◽

Silicon Nanowire ◽

Low Frequency ◽

Cmos Technology ◽

Frequency Noise ◽

Nanowire Transistors ◽

Technology Process ◽

Bulk Substrate

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Pioneering Application of Corona Charge-Kelvin Probe Metrology to Noncontact Characterization of In0.53 Ga0.47 As/Al2O3/HfO2 Stack

MRS Proceedings ◽

10.1557/opl.2014.729 ◽

2014 ◽

Vol 1691 ◽

Author(s):

Alexandre Savtchouk ◽

John D’Amico ◽

Marshall Wilson ◽

Jacek Lagowski ◽

Wei-E Wang ◽

...

Keyword(s):

High Mobility ◽

Dielectric Surface ◽

Differential Capacitance ◽

Voltage Response ◽

Induced Voltage ◽

Kelvin Probe ◽

Dielectric Characterization ◽

High K ◽

Corona Charge

ABSTRACTWe report the first successful application of corona charging noncontact C-V and I-V metrology to interface and dielectric characterization of high-k/III-V structures. The metrology, which has been commonly used in Si IC manufacturing, uses incremental corona charge dosing, ΔQC, on the dielectric surface, and the measurement of surface voltage response, ΔVS, using a Kelvin-probe. Its application to In0.53Ga0.47As with a high-k stack required modifications related to the effects of dielectric trap induced voltage transients. The developed Corona Charge-Kelvin Probe Metrology adopted strictly differential measurements using ΔQC and ΔV, and corresponding differential capacitance rather than measurements based on total global charge, Q, and voltage, V, values.Electrical characterization data including interface trap density, electrical oxide thickness, and dielectric leakage are presented for a sample containing an In0.53 Ga0.47 As channel overlaid with a bilayer (2nm Al2O3/5nm HfO2) dielectric stack that is considered to be very promising for application in performance NFETs with high-mobility channels.

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