Regular Array of Magnetic Nano-Dots Prepared by Nanochannel Glass Replica Masks

2002 ◽  
Vol 721 ◽  
Author(s):  
Bo Cheng ◽  
Kun Yang ◽  
B. L. Justus ◽  
W. J. Yeh
Keyword(s):  
Data Storage ◽  
Magnetic Recording ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Perpendicular Recording ◽  
Recording Technology ◽  
Sputtering Deposition ◽  
Longitudinal Recording ◽  
Dot Density ◽  
Magnetic Dots

AbstractIn magnetic recording technology, barriers based on fundamental physical limits on the data density are being approached for the current longitudinal recording modes. However, demands for higher data storage density have escalated in recent years. Discrete perpendicular recording is a viable method to achieve 100 Gb per square inch and beyond. We report on the development of a novel technique to fabricate uniform arrays of nano-sized magnetic dots. Uniform arrays of nanometer-sized magnetic dots are obtained by magnetron sputtering deposition through a nanochannel glass replica mask. The platinum replica masks are fabricated using thin film deposition on etched nanochannel glass and contain uniform hexagonally patterned voids with diameters as small as 50 nanometers. The magnetic dot density can be as high as 1011 per square inch. Our method provides a simple yet effective way to create regularly arranged discrete magnetic media that can be used for perpendicular magnetic recording. The magnetic properties of the dots are studied with a vibrating sample magnetometer.

Effects of Dot Density and Dot Size on Charge Injection Characteristics in Nanodot Array Produced by Protein Supramolecules

2007 ◽  
Vol 46 (11) ◽  
pp. 7549-7553 ◽  
Author(s):  
Kiyohito Yamada ◽  
Shigeo Yoshii ◽  
Shinya Kumagai ◽  
Atsushi Miura ◽  
Yukiharu Uraoka ◽  
...  
Keyword(s):  
Charge Injection ◽  
Nanodot Array ◽  
Dot Density

scholarly journals The effects of dot density on the metric estimation of rotation and expansion

2004 ◽  
Vol 4 (11) ◽  
pp. 92-92 ◽  
Author(s):  
J. D. Wurfel ◽  
J. F. Barraza ◽  
N. M. Grzywacz
Keyword(s):  
Dot Density

Dot density

2003 ◽  
pp. 143-146
Keyword(s):  
Dot Density

Study on Optimal Scale of Average Netted Dot Density for Light Guide Plate

2015 ◽  
Vol 35 (5) ◽  
pp. 0522002 ◽  
Author(s):  
黄炳乐 Huang Bingle ◽  
郭太良 Guo Tailiang ◽  
陈恩果 Chen Enguo ◽  
徐胜 Xu Sheng
Keyword(s):  
Light Guide ◽  
Optimal Scale ◽  
Light Guide Plate ◽  
Guide Plate ◽  
Dot Density

Excitation Transfer through Quantum Dots Measured by Microluminescence: Dependence on the Quantum Dot Density

2001 ◽  
Vol 187 (1) ◽  
pp. 45-48 ◽  
Author(s):  
F.V. de Sales ◽  
S.W. da Silva ◽  
A.F.G. Monte ◽  
M.A.G. Soler ◽  
M.J. Da Silva ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Excitation Transfer ◽  
Dot Density

Perceived Depth from Dot Density Change by Lateral Head Movements

Perception ◽  
1996 ◽  
Vol 25 (1_suppl) ◽  
pp. 133-133 ◽  
Author(s):  
K Sakurai ◽  
H Ono
Keyword(s):  
Sine Wave ◽  
Visual Input ◽  
Head Movements ◽  
Trade Off ◽  
Rocking Motion ◽  
Dot Density ◽  
Wave Surfaces ◽  
Perceived Motion ◽  
Random Dot Pattern ◽  
Lateral Head

We investigated whether there is a trade-off between magnitude of perceived depth and that of perceived motion, using density changes (expansion/contraction) in a random-dot pattern yoked to lateral head movements. We simulated sine-wave surfaces with a depth of 0, 1, 2, 4, 8, and 16 cm. Subjects viewed the patterns monocularly while moving their heads from side to side laterally, and reported the magnitude of perceived depth and that of perceived motion. When simulated depth was less than 4 cm, the surfaces looked stationary and the amount of perceived depth was the same as that of simulated depth. When it was more than 4 cm, the surfaces appeared to move in a rocking motion and the amount of perceived depth was smaller than that of simulated depth. The trade-off implies a mechanism which transduces single visual input into depth or motion.

scholarly journals Fabrication of Self-Assembling AlGaN Quantum Dot on AlGaN Surfaces Using Anti-Surfactant

1999 ◽  
Vol 4 (S1) ◽  
pp. 852-857 ◽  
Author(s):  
H. Hirayama ◽  
Y. Aoyagi ◽  
S. Tanaka
Keyword(s):  
Chemical Vapor ◽  
Organic Chemical ◽  
3 Dimensional ◽  
Step Flow ◽  
Self Assembling ◽  
Metal Organic ◽  
Dot Density ◽  
20 Nm ◽  
Step Flow Growth ◽  
Organic Chemical Vapor Deposition

We report on the first artificial fabrication of self-assembling AlGaN quantum dots (QDs) on AlGaN surfaces using metal organic chemical vapor deposition (MOCVD). The AlGaN QDs are fabricated using a growth mode change from 2-dimensional step-flow growth to 3-dimensional island formation by modifying the AlGaN surface energy with Si anti-surfactant. The average lateral size and the thickness of fabricated AlGaN QDs, as determined by AFM, are approximately 20 nm and 6nm, respectively. The dot density was found to be controlled from 5×1010 cm−2 down to 2×109 cm−2 by increasing the dose of Si anti-surfactant. We obtained the photoluminescence (PL) from AlGaN QDs embedded with Al0.38Ga0.62N capping layers. The Al incorporation in AlGaN QDs was controllable within the range of 1-5 %.

Threshold Voltage Shift in Hetero-nanocystal Floating Gate Flash Memory

2004 ◽  
Vol 832 ◽  
Author(s):  
Yan Zhu ◽  
Dengtao Zhao ◽  
Ruigang Li ◽  
Jianlin Liu
Keyword(s):  
Threshold Voltage ◽  
Flash Memory ◽  
Oxide Thickness ◽  
Memory Device ◽  
Floating Gate ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Poisson Boltzmann ◽  
Poisson Boltzmann Equation ◽  
Dot Density

ABSTRACTThe threshold voltage shift of a p-channel Ge/Si hetero-nanocrystal floating gate memory device was investigated both numerically and phenomenologically. The numerical investigations, by solving 2-D Poisson-Boltzmann equation, show that the presence of the Ge on Si dot tremendously prolongs the retention time, reflected by the time decay behavior of the threshold voltage shift. The increase of the thickness of either Si or Ge dot will reduce the threshold voltage shift. The shift strongly depends on the dot density. Nevertheless, only a weak relation between the threshold voltage shift and the tunneling oxide thickness was found. A circuit model was then introduced to interpret the behavior of threshold voltage shift, which agrees well with the results of the numerical method.

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