scholarly journals KINETICS OF LOW PRESSURE AMMONIA OXIDATION OVER RH(111)

2018 ◽  
Vol 48 (1) ◽  
pp. 27-30
Author(s):  
U. N. FAGIOLI ◽  
B. V. BOEHN ◽  
M. RAFTI ◽  
R. IMBIHL

The kinetics of the NH3 + O2 reaction over a Rh(111) single crystal catalytic surface was explored in the 10-6 mbar pressure range at temperatures between 300-900 K. Selectivity towards N2 and NO products, and reactive sticking coefficients were monitored in situ using differentially pumped quadrupole mass spectroscopy (QMS).

2019 ◽  
Vol 19 (16) ◽  
pp. 10643-10657 ◽  
Author(s):  
Damien Amedro ◽  
Arne J. C. Bunkan ◽  
Matias Berasategui ◽  
John N. Crowley

Abstract. The radical terminating, termolecular reaction between OH and NO2 exerts great influence on the NOy∕NOx ratio and O3 formation in the atmosphere. Evaluation panels (IUPAC and NASA) recommend rate coefficients for this reaction that disagree by as much as a factor of 1.6 at low temperature and pressure. In this work, the title reaction was studied by pulsed laser photolysis and laser-induced fluorescence over the pressure range 16–1200 mbar and temperature range 217–333 K in N2 bath gas, with experiments at 295 K (67–333 mbar) for O2. In situ measurement of NO2 using two optical absorption set-ups enabled generation of highly precise, accurate rate coefficients in the fall-off pressure range, appropriate for atmospheric conditions. We found, in agreement with previous work, that O2 bath gas has a lower collision efficiency than N2 with a relative collision efficiency to N2 of 0.74. Using the Troe-type formulation for termolecular reactions we present a new set of parameters with k0(N2) = 2.6×10-30 cm6 molecule−2 s−1, k0(O2) = 2.0×10-30 cm6 molecule−2 s−1, m=3.6, k∞=6.3×10-11 cm3 molecule−1 s−1, and Fc=0.39 and compare our results to previous studies in N2 and O2 bath gases.


1990 ◽  
Vol 216 ◽  
Author(s):  
Suhit R. Das ◽  
David J. Lockwood ◽  
Stephen J. Rolfe ◽  
John P. McCaffrey ◽  
John G. Cook

ABSTRACTHeteroepitaxial (100)CdTe || (100)InSb structures have been fabricated by growing CdTe epilayers, at growth temperatures below 200°C, on single crystal InSb substrates by low-energy bias sputtering. Controlled low-energy ion bombardment at the substrate was employed to clean the growth surface in-situ just prior to film deposition and to modify the growth kinetics and enhance adatom mobility during deposition. Raman spectroscopy of the interface revealed no evidence of In2Te3 and secondary ion mass spectroscopy showed the interface to be chemically abrupt.


2017 ◽  
Vol 214 (11) ◽  
pp. 1700177 ◽  
Author(s):  
Vladimir Yurov ◽  
Egor Bushuev ◽  
Andrey Bolshakov ◽  
Evgeny Ashkinazi ◽  
Irina Antonova ◽  
...  

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