In Situ Quadrupole Mass Spectroscopy Etching GaAs with a HCl Gas and Hydrogen Mixture

1990 ◽  
Vol 137 (4) ◽  
pp. 1305-1306 ◽  
Author(s):  
Junji Saito ◽  
Kazuo Kondo
2018 ◽  
Vol 48 (1) ◽  
pp. 27-30
Author(s):  
U. N. FAGIOLI ◽  
B. V. BOEHN ◽  
M. RAFTI ◽  
R. IMBIHL

The kinetics of the NH3 + O2 reaction over a Rh(111) single crystal catalytic surface was explored in the 10-6 mbar pressure range at temperatures between 300-900 K. Selectivity towards N2 and NO products, and reactive sticking coefficients were monitored in situ using differentially pumped quadrupole mass spectroscopy (QMS).


1989 ◽  
Vol 95 (1-4) ◽  
pp. 322-327 ◽  
Author(s):  
Junji Saito ◽  
Kazuo Nanbu ◽  
Tomonori Ishikawa ◽  
Kazuo Kondo

Author(s):  
Dan Bevan ◽  
Christopher David Coath ◽  
Jamie Lewis ◽  
Johannes B Schwieters ◽  
Nicholas Selwyn Lloyd ◽  
...  

We document the utility for in situ Rb-Sr dating of a one-of-a-kind tribrid mass spectrometer, ‘Proteus’, coupled to a UV laser ablation system. Proteus combines a pre-cell quadrupole mass-filter,collision cell,...


2021 ◽  
Vol 96 (12) ◽  
pp. 124040
Author(s):  
Yan Lyu ◽  
Cong Li ◽  
Ding Wu ◽  
Zhonglin He ◽  
Dongye Zhao ◽  
...  

2000 ◽  
Vol 619 ◽  
Author(s):  
Y. Gao ◽  
A.H. Mueller ◽  
E.A. Irene ◽  
O. Auciello ◽  
A.R. Krauss ◽  
...  

ABSTRACTAn in situ study of barrier layers using spectroscopic ellipsometry (SE) and Time-of-Flight (ToF) mass spectroscopy of recoiled ions (MSRI) is presented. First the formation of copper silicides has been observed by real-time SE and in situ MSRI in annealed Cu/Si samples. Second TaSiN films as barrier layers for copper interconnects were investigated. Failure of the TaSiN layers in Cu/TaSiN/Si samples was detected by real-time SE during annealing and confirmed by in situ MSRI. The effect of nitrogen concentration on TaSiN film performance as a barrier was also examined. The stability of both TiN and TaSiN films as barriers for electrodes for dynamic random access memory (DRAM) devices has been studied. It is shown that a combination of in situ SE and MSRI can be used to monitor the evolution of barrier layers and detect the failure of barriers in real-time.


2007 ◽  
Vol 556-557 ◽  
pp. 121-124
Author(s):  
Brian H. Ponczak ◽  
James D. Oliver ◽  
Soon Cho ◽  
Gary W. Rubloff

A quadrupole mass spectrometer unit was utilized to accurately detect the chemical species present inside a SiC CVD reactor growth chamber before, during, and after epitaxial deposition. The in-situ mass spectrometer has been able to confirm the presence of silane (SiH4) and propane (C3H8) decomposition products (eg. Si and CH4) that were predicted from chemical modelling, and give insight into specific reaction kinetics. Additionally, the mass spectrometer has positively detected trace amounts of oxygen, which has helped to identify process weaknesses and possible sources of vacuum leaks.


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