Influence of the Grain Size on the Conduction Mechanism of Barium Strontium Titanate Thin Films

Sol-gel barium strontium titanate ( Ba0.6Sr0.4TiO3) thin films with different grain sizes have been successfully fabricated as metal-insulator-metal (MIM) capacitors. The perovskite structure of the material has been confirmed via X-ray diffraction (XRD). In order to correlate the effect of the grain size to the conduction mechanisms of these films, atomic force microscopy (AFM) results are presented. The grain size shows an important effect on the conduction mechanism for the films. The results show that as the grain size increases, both the impedance and the permittivity of the films decrease, whereas the conductivity shows an inverse variation. The Z* plane for all films shows two regions, corresponding to the bulk mechanism and the distribution of the grain boundaries-electrodes conduction process.M´´ versus frequency plots reveal non-Debye relaxation peaks, which are not able to be observed in the e´´ plots. Alternating current (AC) conductivity versus frequency plots show three regions of conduction processes, i.e. a low-frequency region due to direct current (DC) conduction, a mid-frequency region due to translational hopping motion, and a high-frequency region due to localized hopping and/or reorientational motion.

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Study of leakage current in metal–insulator–metal Mg–Al co-doped barium strontium titanate thin films as a function of temperature and applied field

Thin Solid Films ◽

10.1016/j.tsf.2008.04.059 ◽

2008 ◽

Vol 516 (23) ◽

pp. 8441-8446 ◽

Cited By ~ 5

Author(s):

M.C. Kao ◽

S.Y. Lee ◽

H.Z. Chen ◽

S.L. Young

Keyword(s):

Thin Films ◽

Leakage Current ◽

Strontium Titanate ◽

Barium Strontium Titanate ◽

Applied Field ◽

Metal Insulator ◽

Barium Strontium ◽

Metal Insulator Metal ◽

Co Doped

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The electronic conduction mechanism in barium strontium titanate thin films

Applied Physics Letters ◽

10.1063/1.122827 ◽

1998 ◽

Vol 73 (24) ◽

pp. 3533-3535 ◽

Cited By ~ 141

Author(s):

Sufi Zafar ◽

Robert E. Jones ◽

Bo Jiang ◽

Bruce White ◽

V. Kaushik ◽

...

Keyword(s):

Thin Films ◽

Strontium Titanate ◽

Barium Strontium Titanate ◽

Conduction Mechanism ◽

Electronic Conduction ◽

Barium Strontium

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Radio Frequency (RF) Magnetron Sputtered Barium Strontium Titanate (BST) Thin Film

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.727.942 ◽

2017 ◽

Vol 727 ◽

pp. 942-946 ◽

Cited By ~ 2

Author(s):

Juan Li ◽

Cong Chun Zhang ◽

Yan Lei Wang ◽

Yang Gao ◽

Xiao Lin Zhao

Keyword(s):

Thin Film ◽

Thin Films ◽

Dielectric Properties ◽

Strontium Titanate ◽

Barium Strontium Titanate ◽

Perovskite Phase ◽

Rf Magnetron Sputtering ◽

Barium Strontium ◽

Metal Insulator Metal ◽

Bst Thin Film

Barium strontium titanate (BST) thin films with excellent dielectric properties are deposited by on-axis RF magnetron sputtering system. The effects of composition of the target and oxygen partial pressure on the microstructure of BST thin film have been investigated. The dielectric properties of the thin films are investigated. The results show that composition of BST thin film deposited with pure argon ambient by the target with 30atm% excess of Ba and Sr is stoichiometric. Perovskite phase can be observed in the thin film annealed in oxygen at 750 °C for 30 min. A metal-insulator-metal (MIM) capacitor is fabricated by microfabrication technique. The capacitance value at 2 GHz is 0.417 pF and 1.42 pF for 50 nm and 90 nm BST thin film respectively, and the leakage current density is 6×10-6 A/cm2 and 5.35×10-8 A/cm2 respectively.

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Electrical and Structural Diagnostics of Barium Strontium Titanate (BST) Thin Films

MRS Proceedings ◽

10.1557/opl.2011.620 ◽

2011 ◽

Vol 1292 ◽

Author(s):

Supriya Ketkar ◽

Manoj Kumar Ram ◽

Ashok Kumar ◽

Thomas Weller ◽

Andrew Hoff

Keyword(s):

Thin Films ◽

Strontium Titanate ◽

Barium Strontium Titanate ◽

Sol Gel ◽

Electrical Characterization ◽

Film Structure ◽

Production Costs ◽

Bst Thin Films ◽

Barium Strontium ◽

Metal Insulator Metal

ABSTRACTThe properties of radio frequency, rf magnetron sputtered Barium Strontium Titanate (Ba1-xSrxTiO3), BST, thin films were investigated and compared with BST thin films deposited by sol-gel method with the aim of determining relationships between the oxide deposition parameters, the film structure, and the electric field dependence. This work presents noncontact electrical characterization of BST films using Corona Kelvin metrology (C-KM) which has been employed earlier only in the silicon industry. The films were structurally characterized using thickness profilometer, X-ray diffraction (XRD) and atomic force microscopy (AFM) techniques. The use of sol-gel technique to fabricate small area metal-insulator-metal (MIM) structures is found to be beneficial from the point of saving fabrication time and production costs.

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