Radio Frequency (RF) Magnetron Sputtered Barium Strontium Titanate (BST) Thin Film

2017 ◽  
Vol 727 ◽  
pp. 942-946 ◽  
Author(s):  
Juan Li ◽  
Cong Chun Zhang ◽  
Yan Lei Wang ◽  
Yang Gao ◽  
Xiao Lin Zhao

Barium strontium titanate (BST) thin films with excellent dielectric properties are deposited by on-axis RF magnetron sputtering system. The effects of composition of the target and oxygen partial pressure on the microstructure of BST thin film have been investigated. The dielectric properties of the thin films are investigated. The results show that composition of BST thin film deposited with pure argon ambient by the target with 30atm% excess of Ba and Sr is stoichiometric. Perovskite phase can be observed in the thin film annealed in oxygen at 750 °C for 30 min. A metal-insulator-metal (MIM) capacitor is fabricated by microfabrication technique. The capacitance value at 2 GHz is 0.417 pF and 1.42 pF for 50 nm and 90 nm BST thin film respectively, and the leakage current density is 6×10-6 A/cm2 and 5.35×10-8 A/cm2 respectively.

Materials ◽  
2022 ◽  
Vol 15 (2) ◽  
pp. 578
Author(s):  
Agata Lisińska-Czekaj ◽  
Dionizy Czekaj

In the present paper, results of X-ray photoelectron studies of electroceramic thin films of barium strontium titanate, Ba1−xSrxTiO3 (BST), composition deposited on stainless-steel substrates are presented. The thin films were prepared by the sol-gel method. A spin-coating deposition of BST layers with different chemical compositions was utilized so the layer-type structure of (0-2) connectivity was formed. After the deposition, the thin-film samples were heated in air atmosphere at temperature T = 700 °C for 1 h. The surfaces of BST thin films subjected to thermal treatment were studied by X-ray diffraction. X-ray diffraction measurements confirmed the perovskite-type phase for all grown thin-film samples. The oxidation states of the elements were examined by the X-ray photoelectron spectroscopy method. X-ray photoelectron spectroscopy survey spectra as well as high-resolution spectra (photo-peaks) of the main metallic elements, such as Ti, Ba, and Sr, were compared for the layer-type structures, differing in the deposition sequence of the barium strontium titanate layers constituting the BST thin film.


2021 ◽  
pp. 2150030
Author(s):  
Hanting Dong ◽  
Liang Ke ◽  
Xiangjun Hui ◽  
Jiangfeng Mao ◽  
Haiqing Du ◽  
...  

Effects of thermal misfit strains on dielectric features for sandwich structural barium strontium titanate (BST) thin films on metal plates were investigated via a modified thermodynamic model. When TEC of substrates is closer to that of BST, larger permittivity and tunability can be received. The tendency of permittivities and tunabilities of such films as a function of TEC of substrates agrees with that of single compositional BST films and compositionally graded BST multilayer films. The highest tunability reaches 60% at the biasing field of 300 kV/cm when the films are onto Ti metal. Moreover, Ba[Formula: see text]Sr[Formula: see text]TiO3/Ba[Formula: see text]Sr[Formula: see text]TiO3/Ba[Formula: see text]Sr[Formula: see text]TiO3 structure can obtain higher tunability than Ba[Formula: see text]Sr[Formula: see text]TiO3/Ba[Formula: see text]Sr[Formula: see text]TiO3/Ba[Formula: see text]Sr[Formula: see text]TiO3 structure, while Ba[Formula: see text]Sr[Formula: see text]TiO3/Ba[Formula: see text]Sr[Formula: see text]TiO3/Ba[Formula: see text]Sr[Formula: see text]TiO3 films show better compatible composition range for relatively larger tunability. Dielectric properties of sandwich-like BST films in some references can also be analyzed based on our calculated results.


2020 ◽  
Vol 5 (1) ◽  
pp. 11-20
Author(s):  
Rahmi Dewi ◽  
Krisman Krisman ◽  
Zulkarnaen Zulkarnaen ◽  
Rahmi Afrida Syahraini ◽  
TS Luqman Husein

A thin layer of Barium Strontium Titanate Ba0.15Sr0.85TiO3 (BST) was developed on a glass substrate using a sol-gel method with annealing temperatures and spin coating process at 3500 rpm for 30 seconds. The annealing temperature varied from 600oC, 650oC, and 700oC.  Characterization of optical properties was developed using UV-Vis spectroscopy to determine the energy bandgap. The values of the BST thin layer energy band at the annealing temperature were 3.55 eV, 3.32 eV, and 3.10 eV, respectively. The results indicate that the BST thin film was a semiconductor material.


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