Device Structure Optimization for Maximizing Performance of 25-Gbps Delpletion-type Silicon-ring Modulators

2021 ◽  
Vol 58 (1) ◽  
pp. 21-29
Author(s):  
Min-Hyeok Seong ◽  
Youngkwan Jo ◽  
Minkyu Kim ◽  
Kangyeob Park ◽  
Won-Seok Oh ◽  
...  
Keyword(s):  
Structure Optimization ◽  
Device Structure ◽  
Type Silicon ◽  
Ring Modulators

A Large-signal Equivalent Circuit for Depletion-type Silicon Ring Modulators

2018 ◽  
Author(s):  
Minkyu Kim ◽  
Myungjin Shin ◽  
Min-Hyeong Kim ◽  
Byung-Min Yu ◽  
Christian Mai ◽  
...  
Keyword(s):  
Equivalent Circuit ◽  
Large Signal ◽  
Type Silicon ◽  
Ring Modulators

Application of compound blue for white OLED

2014 ◽  
Vol 92 (7/8) ◽  
pp. 947-950 ◽  
Author(s):  
T. Zhang ◽  
S.J. He ◽  
D.K. Wang ◽  
N. Jiang ◽  
Z.H. Lu
Keyword(s):  
White Light ◽  
High Efficiency ◽  
Broad Band ◽  
Structure Optimization ◽  
Organic Light Emitting Diodes ◽  
Device Structure ◽  
Light Emitting ◽  
Organic Light ◽  
White Oled ◽  
Triplet Excitons

Used as a blue emitter, fluorescent dye 4,4′-bis(9-ethyl-3-carbazovinylene)-1,1′-biphenyl (BCzVBi) is compounded with Bis[2-(2-hydroxyphenyl)-pyridine]beryllium(Bepp2) to yield high efficiency. When combined with green and red phosphorescent emitting layers, a broad band white light organic light-emitting diodes are obtained and studied. In this device, both singlet and triplet excitons can be harvested to generate white color. Through device structure optimization, a high efficiency of 20.8 cd/A, which corresponds to an external quantum efficiency of 11.3% has been achieved.

A Temperature-Aware Large-signal SPICE Model for Depletion-type Silicon Ring Modulators

2021 ◽  
pp. 1-1
Author(s):  
Minkyu Kim ◽  
Youngkwan Jo ◽  
Stefan Lischke ◽  
Christian Mai ◽  
Lars Zimmermann ◽  
...  
Keyword(s):  
Large Signal ◽  
Spice Model ◽  
Type Silicon ◽  
Ring Modulators

Large-signal SPICE model for depletion-type silicon ring modulators

2019 ◽  
Vol 7 (9) ◽  
pp. 948 ◽  
Author(s):  
Minkyu Kim ◽  
Myungjin Shin ◽  
Min-Hyeong Kim ◽  
Byung-Min Yu ◽  
Younghyun Kim ◽  
...  
Keyword(s):  
Large Signal ◽  
Spice Model ◽  
Type Silicon ◽  
Ring Modulators

Modulation performance optimization for depletion-type silicon micro-ring modulators

2016 ◽  
Author(s):  
Jinsoo Rhim ◽  
Byung-Min Yu ◽  
Jeong-Min Lee ◽  
Seong-Ho Cho ◽  
Woo-Young Choi
Keyword(s):  
Performance Optimization ◽  
Type Silicon ◽  
Ring Modulators

Influence of MBE Growth Conditions on Dislocation Densities of GaAs/Ge Epilayers Grown on Silicon Substrates

1985 ◽  
Vol 43 ◽  
pp. 364-365
Author(s):  
K.M. Hones ◽  
P. Sheldon ◽  
B.G. Yacobi ◽  
A. Mason
Keyword(s):  
High Efficiency ◽  
Lattice Mismatch ◽  
Low Cost ◽  
Growth Conditions ◽  
Nonradiative Recombination ◽  
Device Structure ◽  
Si Substrates ◽  
Transmission Electron ◽  
Dislocation Densities ◽  
Dislocation Type

There is increasing interest in growing epitaxial GaAs on Si substrates. Such a device structure would allow low-cost substrates to be used for high-efficiency cascade- junction solar cells. However, high-defect densities may result from the large lattice mismatch (∼4%) between the GaAs epilayer and the silicon substrate. These defects can act as nonradiative recombination centers that can degrade the optical and electrical properties of the epitaxially grown GaAs. For this reason, it is important to optimize epilayer growth conditions in order to minimize resulting dislocation densities. The purpose of this paper is to provide an indication of the quality of the epitaxially grown GaAs layers by using transmission electron microscopy (TEM) to examine dislocation type and density as a function of various growth conditions. In this study an intermediate Ge layer was used to avoid nucleation difficulties observed for GaAs growth directly on Si substrates. GaAs/Ge epilayers were grown by molecular beam epitaxy (MBE) on Si substrates in a manner similar to that described previously.

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