scholarly journals Behavior of Solid Phase Crystallization of Amorphous Silicon Films at High Temperatures according to Raman Spectroscopy

2010 ◽  
Vol 43 (1) ◽  
pp. 7-11
Author(s):  
Won-Eui Hong ◽  
Jae-Sang Ro
Keyword(s):  
Raman Spectroscopy ◽  
Amorphous Silicon ◽  
High Temperatures ◽  
Solid Phase ◽  
Silicon Films ◽  
Solid Phase Crystallization

Solid-phase crystallization and dopant activation of amorphous silicon films by pulsed rapid thermal annealing

1998 ◽  
Vol 135 (1-4) ◽  
pp. 205-208 ◽  
Author(s):  
Yongqian Wang ◽  
Xianbo Liao ◽  
Zhixun Ma ◽  
Guozhen Yue ◽  
Hongwei Diao ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Solid Phase ◽  
Silicon Films ◽  
Solid Phase Crystallization ◽  
Dopant Activation

Bubbly Silicon: A New Mechanism for Solid Phase Crystallization of Amorphous Silicon

2009 ◽  
Author(s):  
Curtis Anderson ◽  
Lin Cui ◽  
Uwe Kortshagen
Keyword(s):  
Amorphous Silicon ◽  
Polycrystalline Silicon ◽  
Silicon Nanocrystals ◽  
Solid Phase ◽  
Amorphous Film ◽  
Silicon Films ◽  
Amorphous Films ◽  
Solid Phase Crystallization ◽  
Rapid Formation ◽  
Polycrystalline Silicon Films

This paper describes the rapid formation of polycrystalline silicon films through seeding with silicon nanocrystals. The incorporation of seed crystals into amorphous silicon films helps to eliminate the crystallization incubation time observed in non-seeded amorphous silicon films. Furthermore, the formation of several tens of nanometer in diameter voids is observed when cubic silicon nanocrystals with around 30 nm in size are embedded in the amorphous films. These voids move through the amorphous film with high velocity, pulling behind them a crystallized “tail.” This mechanism leads to rapid formation of polycrystalline films.

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