Direct observation of ultra-rapid solid phase crystallization of amorphous silicon films irradiated by micro-thermal-plasma-jet

2021 ◽  
Vol 121 ◽  
pp. 105357
Author(s):  
Hoa Thi Khanh NGUYEN ◽  
Hiroaki Hanafusa ◽  
Yuri Mizukawa ◽  
Shohei Hayashi ◽  
Seiichiro Higashi
Keyword(s):  
Amorphous Silicon ◽  
Direct Observation ◽  
Thermal Plasma ◽  
Solid Phase ◽  
Plasma Jet ◽  
Silicon Films ◽  
Solid Phase Crystallization ◽  
Thermal Plasma Jet

Generation of ultra high-power thermal plasma jet and its application to crystallization of amorphous silicon films

2017 ◽  
Vol 56 (6S2) ◽  
pp. 06HE05
Author(s):  
Ryosuke Nakashima ◽  
Ryota Shin ◽  
Hiroaki Hanafusa ◽  
Seiichiro Higashi
Keyword(s):  
Amorphous Silicon ◽  
High Power ◽  
Thermal Plasma ◽  
Plasma Jet ◽  
Silicon Films ◽  
Thermal Plasma Jet

Correlation Between Annealing Temperature and Crystallinity of Si Films Prepared by Thermal Plasma Jet Crystallization Technique

2006 ◽  
Vol 910 ◽  
Author(s):  
Hirotaka Kaku ◽  
Seiichiro Higashi ◽  
Tatsuya Okada ◽  
Hideki Murakami ◽  
Seiichi Miyazaki
Keyword(s):  
Phase Transformation ◽  
Thermal Plasma ◽  
Crystalline State ◽  
Annealing Temperature ◽  
Solid Phase ◽  
Plasma Jet ◽  
Solid Phase Crystallization ◽  
Thermal Plasma Jet ◽  
Amorphous Si ◽  
Si Films

AbstractTransient reflectivity of amorphous Si (a-Si) films during thermal plasma jet (TPJ) irradiation has been measured to characterize the phase transformation in millisecond time domain. The a-Si films first transform to crystalline by solid phase crystallization (SPC) followed by melting of the film, and then solidifies to the final crystalline state. By increasing the SPC temperature from about 1100 K to 1300 K, the duration of phase transformation decreases from about 1 ms to 100 μs. The crystallinity of the SPC films is improved not only by annealing the films at a high temperature but also annealing them with longer duration.

Leading Wave Crystallization Induced by Micro-Thermal-Plasma-Jet Irradiation of Amorphous Silicon Films

2013 ◽  
Vol 52 (5S2) ◽  
pp. 05EE02 ◽  
Author(s):  
Shohei Hayashi ◽  
Yuji Fujita ◽  
Takahiro Kamikura ◽  
Kohei Sakaike ◽  
Muneki Akazawa ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Thermal Plasma ◽  
Plasma Jet ◽  
Silicon Films ◽  
Thermal Plasma Jet

Solid-phase crystallization and dopant activation of amorphous silicon films by pulsed rapid thermal annealing

1998 ◽  
Vol 135 (1-4) ◽  
pp. 205-208 ◽  
Author(s):  
Yongqian Wang ◽  
Xianbo Liao ◽  
Zhixun Ma ◽  
Guozhen Yue ◽  
Hongwei Diao ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Solid Phase ◽  
Silicon Films ◽  
Solid Phase Crystallization ◽  
Dopant Activation
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