scholarly journals Solid-Phase Crystallization of Amorphous Silicon Films

10.5772/59723 ◽  
2015 ◽  
Author(s):  
Dong Nyung Lee ◽  
Sung Bo Lee
Keyword(s):  
Amorphous Silicon ◽  
Solid Phase ◽  
Silicon Films ◽  
Solid Phase Crystallization

Solid-phase crystallization and dopant activation of amorphous silicon films by pulsed rapid thermal annealing

1998 ◽  
Vol 135 (1-4) ◽  
pp. 205-208 ◽  
Author(s):  
Yongqian Wang ◽  
Xianbo Liao ◽  
Zhixun Ma ◽  
Guozhen Yue ◽  
Hongwei Diao ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Solid Phase ◽  
Silicon Films ◽  
Solid Phase Crystallization ◽  
Dopant Activation

Bubbly Silicon: A New Mechanism for Solid Phase Crystallization of Amorphous Silicon

2009 ◽  
Author(s):  
Curtis Anderson ◽  
Lin Cui ◽  
Uwe Kortshagen
Keyword(s):  
Amorphous Silicon ◽  
Polycrystalline Silicon ◽  
Silicon Nanocrystals ◽  
Solid Phase ◽  
Amorphous Film ◽  
Silicon Films ◽  
Amorphous Films ◽  
Solid Phase Crystallization ◽  
Rapid Formation ◽  
Polycrystalline Silicon Films

This paper describes the rapid formation of polycrystalline silicon films through seeding with silicon nanocrystals. The incorporation of seed crystals into amorphous silicon films helps to eliminate the crystallization incubation time observed in non-seeded amorphous silicon films. Furthermore, the formation of several tens of nanometer in diameter voids is observed when cubic silicon nanocrystals with around 30 nm in size are embedded in the amorphous films. These voids move through the amorphous film with high velocity, pulling behind them a crystallized “tail.” This mechanism leads to rapid formation of polycrystalline films.

Seeding Solid Phase Crystallization of Amorphous Silicon Films with Embedded Nanocrystals

2008 ◽  
Vol 1066 ◽  
Author(s):  
Curtis Anderson ◽  
Uwe Kortshagen
Keyword(s):  
Electron Microscopy ◽  
Amorphous Silicon ◽  
Silicon Nanocrystals ◽  
Solid Phase ◽  
Silicon Films ◽  
Amorphous Films ◽  
Solid Phase Crystallization ◽  
Transmission Electron ◽  
Quartz Tube Furnace ◽  
Heated Stage

ABSTRACTSilicon nanocrystals with diameters up to 30 nm are used as nucleation seeds for fast solid phase crystallization of amorphous silicon films. Purely amorphous films required an incubation time of up to 12 hours at 600°C prior to the onset of nucleation, while films with nanocrystals embedded between layers of amorphous silicon grew immediately upon annealing in a quartz tube furnace. Structural characterization was performed by heated-stage transmission electron microscopy and Raman spectroscopy.

scholarly journals Solid-phase crystallization of ultra high growth rate amorphous silicon films

2012 ◽  
Vol 111 (10) ◽  
pp. 103510 ◽  
Author(s):  
K. Sharma ◽  
M. V. Ponomarev ◽  
M. A. Verheijen ◽  
O. Kunz ◽  
F. D. Tichelaar ◽  
...  
Keyword(s):  
Growth Rate ◽  
Amorphous Silicon ◽  
Solid Phase ◽  
High Growth ◽  
High Growth Rate ◽  
Silicon Films ◽  
Solid Phase Crystallization
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