scholarly journals n-Type β-FeSi2/p-type Si Near-infrared Photodiodes Prepared by Facing-targets Direct-current Sputtering

10.5772/14775 ◽  
2011 ◽  
Author(s):  
Mahmoud Shaban ◽  
Tsuyoshi Yoshitake
Keyword(s):  
Direct Current ◽  
Near Infrared ◽  
Infrared Photodiodes ◽  
P Type ◽  
Direct Current Sputtering

n-Type Nanocrystalline FeSi2/intrinsic Si/p-Type Si Heterojunction Photodiodes Fabricated by Facing-Target Direct-Current Sputtering

2012 ◽  
Vol 51 (2R) ◽  
pp. 021301 ◽  
Author(s):  
Nathaporn Promros ◽  
Kyohei Yamashita ◽  
Chen Li ◽  
Kenji Kawai ◽  
Mahmoud Shaban ◽  
...  
Keyword(s):  
Direct Current ◽  
P Type ◽  
Direct Current Sputtering

Electrical and Photovoltaic Properties of n-Type Nanocrystalline-FeSi2/p-Type Si Heterojunctions Prepared by Facing-Targets Direct-Current Sputtering at Room Temperature

2008 ◽  
Vol 47 (7) ◽  
pp. 5420-5422 ◽  
Author(s):  
Mahmoud Shaban ◽  
Haruhiko Kondo ◽  
Kazuhiro Nakashima ◽  
Tsuyoshi Yoshitake
Keyword(s):  
Direct Current ◽  
Room Temperature ◽  
Photovoltaic Properties ◽  
P Type ◽  
Direct Current Sputtering

Photovoltaic Properties and Series Resistance of p-Type Si/Intrinsic Si/n-Type Nanocrystalline FeSi2 Heterojunctions Created by Utilizing Facing-Targets Direct-Current Sputtering

2019 ◽  
Vol 19 (3) ◽  
pp. 1445-1450 ◽  
Author(s):  
Weerasaruth Kaenrai ◽  
Nathaporn Promros ◽  
Phongsaphak Sittimart ◽  
Rawiwan Chaleawpong ◽  
Peerasil Charoenyuenyao ◽  
...  
Keyword(s):  
Direct Current ◽  
Series Resistance ◽  
Photovoltaic Properties ◽  
P Type ◽  
Direct Current Sputtering

n-Type Nanocrystalline FeSi$_{2}$/intrinsic Si/p-Type Si Heterojunction Photodiodes Fabricated by Facing-Target Direct-Current Sputtering

2012 ◽  
Vol 51 ◽  
pp. 021301
Author(s):  
Nathaporn Promros ◽  
Kyohei Yamashita ◽  
Chen Li ◽  
Kenji Kawai ◽  
Mahmoud Shaban ◽  
...  
Keyword(s):  
Direct Current ◽  
P Type ◽  
Direct Current Sputtering

Interface State Density and Series Resistance of n-Type Nanocrystalline FeSi2/p-Type Si Heterojunctions Formed by Utilizing Facing-Target Direct-Current Sputtering

2018 ◽  
Vol 18 (3) ◽  
pp. 1841-1846 ◽  
Author(s):  
Phongsaphak Sittimart ◽  
Asanlaya Duangrawa ◽  
Peeradon Onsee ◽  
Sakmongkon Teakchaicum ◽  
Adison Nopparuchikun ◽  
...  
Keyword(s):  
Direct Current ◽  
Series Resistance ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
P Type ◽  
Direct Current Sputtering

Production of p-Type Si/n-Type β-FeSi2 Heterojunctions Using Facing-Targets Direct-Current Sputtering and Evaluation of Their Resistance and Interface State Density

2018 ◽  
Vol 215 (20) ◽  
pp. 1701022 ◽  
Author(s):  
Rawiwan Chaleawpong ◽  
Nathaporn Promros ◽  
Peerasil Charoenyuenyao ◽  
Adison Nopparuchikun ◽  
Phongsaphak Sittimart ◽  
...  
Keyword(s):  
Direct Current ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
P Type ◽  
Direct Current Sputtering

Influences of hydrogen passivation on NIR photodetection of n-type β-FeSi2/p-type Si heterojunction photodiodes fabricated by facing-targets direct-current sputtering

2012 ◽  
Vol 1396 ◽  
Author(s):  
Kyohei Yamashita ◽  
Nathaporn Promros ◽  
Ryūhei Iwasaki ◽  
Shota Izumi ◽  
Tsuyoshi Yoshitake
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Direct Current ◽  
The Other ◽  
Initial Growth ◽  
Hydrogen Passivation ◽  
Dangling Bonds ◽  
Capacitance Density ◽  
P Type ◽  
Direct Current Sputtering

ABSTRACTHydrogen passivation was applied to the initial epitaxial growth of n-type β-FeSi2 thin films on p-type Si(111) substrates by facing-targets direct-current sputtering (FTDCS) in order to reduced the formation of interface states and terminate dangling bonds in the β-FeSi2 films, and the passivation effects were studied on basis of the electrical evaluation results of the formed n-type β-FeSi2/p-type Si heterojunction photodiodes. The initial growth was made at different gas inflow H2/Ar ratios ranging from 0 to 0.2. The photodetection performance of the photodiode fabricated at the ratio of 0.2 was markedly improved as compared to those of the other samples. The quantum efficiency and detectivity were 2.08 % and 1.75 × 1010 cm√Hz/W, respectively. The sample exhibited the minimum junction capacitance density of 9.2 nF/cm2. The enhanced photodetective performance should be mainly because dangling bonds that act as trap centers for photocarriers are effectively inactivated by the passivation.

Photovoltaic, capacitance-voltage, conductance-voltage, and electrical impedance characteristics of p-type silicon/intrinsic-silicon/n-type semiconducting iron disilicide heterostructures built via facing target direct-current sputtering

2020 ◽  
Vol 709 ◽  
pp. 138229
Author(s):  
Rawiwan Chaleawpong ◽  
Nathaporn Promros ◽  
Peerasil Charoenyuenyao ◽  
Nattakorn Borwornpornmetee ◽  
Pattarapol Sittisart ◽  
...  
Keyword(s):  
Direct Current ◽  
Electrical Impedance ◽  
Iron Disilicide ◽  
Type Silicon ◽  
Impedance Characteristics ◽  
Capacitance Voltage ◽  
P Type ◽  
Direct Current Sputtering

Optical Expediency of Back Electrode Materials for Organic Near-Infrared Photodiodes

2021 ◽  
Author(s):  
Nora Schopp ◽  
Thuc-Quyen Nguyen ◽  
Viktor V. Brus
Keyword(s):  
Near Infrared ◽  
Electrode Materials ◽  
Infrared Photodiodes
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