scholarly journals Study of Electromagnetic Radiation Sources Using Time Reversal: Application to a Power Electronic Converter

2021 ◽  
Author(s):  
Sassia Hedia ◽  
Bessem Zitouna ◽  
Jaleleddine Ben Hadj Slama ◽  
Lionel Pichon

Recently, modern power electronic systems have been introduced in different applications, such as in avionics and wireless communication. The increasing technological complexity of these systems is posing serious challenges regarding electromagnetic compatibility (EMC) issues. Indeed, the radiation emitted from electronic circuits can induce harmful effects on nearby devices. Thus, several research works have been conducted using the nearfield technique to deal with electromagnetic interferences (EMI) that might occur, especially due to rapidly changing currents and voltages. In the present work, a detailed study about the characterization of the electromagnetic nearfield-radiated emissions is established using a time-domain analysis to provide an equivalent model constituted of a set of electromagnetic dipole parameters. Source reconstruction has been obtained using electromagnetic time reversal (EMTR), which has proven successful and efficient in identifying transient disturbance sources in power electronics. Experimental measurements of the magnetic nearfield have been carried out under an AC/DC flyback converter. The accuracy of the proposed method has been confirmed by visualizing measured magnetic field components, which are in good agreement with the calculated maps. The results of a reasonable computing time have shown that, particularly in transient signals with a wide frequency band, the suggested inverse method is an adequate alternative to overcome frequency domain limitations.

2002 ◽  
Vol 122 (8) ◽  
pp. 775-780
Author(s):  
Yasuaki Kuroe ◽  
Mikihiko Matsui

2007 ◽  
Author(s):  
R. E. Crosbie ◽  
J. J. Zenor ◽  
R. Bednar ◽  
D. Word ◽  
N. G. Hingorani

2020 ◽  
Vol 9 (3) ◽  
pp. 63-72
Author(s):  
Andreas Bendicks ◽  
Tobias Dorlemann ◽  
Timo Osterburg ◽  
Stephan Frei

2015 ◽  
Vol 821-823 ◽  
pp. 810-813 ◽  
Author(s):  
Maxime Berthou ◽  
Dominique Planson ◽  
Dominique Tournier

With the commercial availability of SiC power transistors, this decade will mark an important breakthrough in power transistor technology. However, in power electronic systems, disturbances may place them in short-circuit condition and little knowledge exist about their SC capability. This paper presents our study of SiC MOSFETs, JFETs and BJT under capacitive load short-circuit up to 600V.


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