scholarly journals Tunnel Field Effect Transistors Based on Two-Dimensional Material Van-der-Waals Heterostructures

2020 ◽  
Author(s):  
Jiang Cao
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Van Der Waals ◽  
Two Dimensional ◽  
Van Der Waals Heterostructures

Spin tunnel field-effect transistors based on two-dimensional van der Waals heterostructures

2019 ◽  
Vol 2 (4) ◽  
pp. 159-163 ◽  
Author(s):  
Shengwei Jiang ◽  
Lizhong Li ◽  
Zefang Wang ◽  
Jie Shan ◽  
Kin Fai Mak
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Van Der Waals ◽  
Two Dimensional ◽  
Van Der Waals Heterostructures

Ferroelectric Field-Effect Transistors Based on MoS2 and CuInP2S6 Two-Dimensional van der Waals Heterostructure

ACS Nano ◽  
2018 ◽  
Vol 12 (7) ◽  
pp. 6700-6705 ◽  
Author(s):  
Mengwei Si ◽  
Pai-Ying Liao ◽  
Gang Qiu ◽  
Yuqin Duan ◽  
Peide D. Ye
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Van Der Waals ◽  
Two Dimensional ◽  
Van Der Waals Heterostructure

Tunable Schottky and Ohmic contacts in graphene and tellurene van der Waals heterostructures

2019 ◽  
Vol 21 (42) ◽  
pp. 23611-23619 ◽  
Author(s):  
Xinming Qin ◽  
Wei Hu ◽  
Jinlong Yang
Keyword(s):  
Electric Field ◽  
Field Effect ◽  
Ohmic Contacts ◽  
Field Effect Transistors ◽  
Van Der Waals ◽  
Interlayer Coupling ◽  
Van Der Waals Heterostructures ◽  
Potential Applications

Electric field and interlayer coupling tunable Schottky and Ohmic contacts in graphene and tellurene van der Waals heterostructures have been predicted theoretically to expect potential applications in graphene-based field-effect transistors.

Mobility Engineering in Vertical Field Effect Transistors Based on Van der Waals Heterostructures

2018 ◽  
Vol 30 (9) ◽  
pp. 1704435 ◽  
Author(s):  
Yong Seon Shin ◽  
Kiyoung Lee ◽  
Young Rae Kim ◽  
Hyangsook Lee ◽  
I. Min Lee ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Van Der Waals ◽  
Van Der Waals Heterostructures ◽  
Vertical Field ◽  
Vertical Field Effect

Lowering the Schottky barrier height of G/WSSe van der Waals heterostructures by changing the interlayer coupling and applying external biaxial strain

2020 ◽  
Vol 22 (45) ◽  
pp. 26231-26240
Author(s):  
W. X. Zhang ◽  
Y. Yin ◽  
C. He
Keyword(s):  
Field Effect ◽  
Schottky Barrier Height ◽  
Field Effect Transistors ◽  
Van Der Waals ◽  
Transition Metal Dichalcogenides ◽  
Interlayer Coupling ◽  
Two Dimensional ◽  
Biaxial Strain ◽  
Metal Dichalcogenides ◽  
Design And Manufacture

Graphene-based van der Waals (vdW) heterostructures composed of two-dimensional transition metal dichalcogenides (TMDs) and graphene show great potential in the design and manufacture of field effect transistors.

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