The semi-markov model for the ‘technological module – storage device’ structure.

2016 ◽  
Vol 237 (1) ◽  
pp. 16-28
Author(s):  
V.Ya. Kopp ◽  
A.L. Kartashov ◽  
M.V. Zamoryonov ◽  
V.Yu. Klyukin
Keyword(s):  
Markov Model ◽  
Storage Device ◽  
Device Structure ◽  
Technological Module

scholarly journals The semi-Markov model for the ‘technological module–storage device’ structure

2016 ◽  
Vol 2 (1) ◽  
pp. 7-16
Author(s):  
Vadim Ya. Kopp ◽  
Aleksey L. Kartashov ◽  
Michael V. Zamoryonov ◽  
Valery Y. Klyukin
Keyword(s):  
Markov Model ◽  
Storage Device ◽  
Device Structure ◽  
Technological Module

Research on Heat Storage-Release Property of Rectangular Array Tube Encapsulated Heat Storage Device

2014 ◽  
Vol 672-674 ◽  
pp. 1496-1500
Author(s):  
Hai Chuan Tian ◽  
Jian Hui Niu
Keyword(s):  
Heat Transfer ◽  
Phase Change ◽  
Heat Storage ◽  
Storage Device ◽  
Device Structure ◽  
Heat Accumulator ◽  
Rectangular Array ◽  
Rectangular Tube ◽  
Change Material ◽  
The Heat Transfer Coefficient

based on previous studies heat storage device structure was optimized and a rectangular tube array encapsulated phase change heat storage device was designed. Compared to sleeve heat accumulator, the heat transfer area was increased 2 times and phase change material thickness was reduced, which has greatly reduced the thermal resistance and improved the heat transfer coefficient. Thermal performance experiment bench of phase change heat storage device was built; heat storage performance experiment was carried on and the results were analysed.

Influence of MBE Growth Conditions on Dislocation Densities of GaAs/Ge Epilayers Grown on Silicon Substrates

1985 ◽  
Vol 43 ◽  
pp. 364-365
Author(s):  
K.M. Hones ◽  
P. Sheldon ◽  
B.G. Yacobi ◽  
A. Mason
Keyword(s):  
High Efficiency ◽  
Lattice Mismatch ◽  
Low Cost ◽  
Growth Conditions ◽  
Nonradiative Recombination ◽  
Device Structure ◽  
Si Substrates ◽  
Transmission Electron ◽  
Dislocation Densities ◽  
Dislocation Type

There is increasing interest in growing epitaxial GaAs on Si substrates. Such a device structure would allow low-cost substrates to be used for high-efficiency cascade- junction solar cells. However, high-defect densities may result from the large lattice mismatch (∼4%) between the GaAs epilayer and the silicon substrate. These defects can act as nonradiative recombination centers that can degrade the optical and electrical properties of the epitaxially grown GaAs. For this reason, it is important to optimize epilayer growth conditions in order to minimize resulting dislocation densities. The purpose of this paper is to provide an indication of the quality of the epitaxially grown GaAs layers by using transmission electron microscopy (TEM) to examine dislocation type and density as a function of various growth conditions. In this study an intermediate Ge layer was used to avoid nucleation difficulties observed for GaAs growth directly on Si substrates. GaAs/Ge epilayers were grown by molecular beam epitaxy (MBE) on Si substrates in a manner similar to that described previously.

Measurement of lattice parameter at the nanometer scale using convergent-beam microdiffraction from a thermal emission source

1993 ◽  
Vol 51 ◽  
pp. 690-691
Author(s):  
W. T. Pike
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Thermal Emission ◽  
Lattice Parameter ◽  
Scanning Transmission Electron Microscope ◽  
Emission Source ◽  
Device Structure ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Convergent Beam

With the advent of crystal growth techniques which enable device structure control at the atomic level has arrived a need to determine the crystal structure at a commensurate scale. In particular, in epitaxial lattice mismatched multilayers, it is of prime importance to know the lattice parameter, and hence strain, in individual layers in order to explain the novel electronic behavior of such structures. In this work higher order Laue zone (holz) lines in the convergent beam microdiffraction patterns from a thermal emission transmission electron microscope (TEM) have been used to measure lattice parameters to an accuracy of a few parts in a thousand from nanometer areas of material.Although the use of CBM to measure strain using a dedicated field emission scanning transmission electron microscope has already been demonstrated, the recording of the diffraction pattern at the required resolution involves specialized instrumentation. In this work, a Topcon 002B TEM with a thermal emission source with condenser-objective (CO) electron optics is used.

Determination of the Size of an Imaging Data Storage Device at a Full PACS Hospital

2000 ◽  
Vol 42 (4) ◽  
pp. 705
Author(s):  
Soon Joo Cha ◽  
Yong Hoon Kim ◽  
Gham Hur
Keyword(s):  
Data Storage ◽  
Storage Device ◽  
Imaging Data
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