Crystal growth method of gallium arsenide using czochralski method

Crystalline yttrium iron garnet (YIG) is an important magneto-optical material. However, this crystal is an incongruent melting compound. As is well known, compared to the crystal growth of a congruent melting compound by using the Czochralski method, the crystal growth of an incongruent melting compound is more difficult. In this work, a system for growing Ga:YIG single crystals by the edge-defined film-fed growth (EFG) method was designed and constructed, and the mechanism of crystal growth was also preliminarily studied. The Ga3+dopant concentration, the Curie temperature and the transmission spectra of as-grown crystals were investigated to evaluate their potential application in magneto-optical devices. The success of growing Ga:YIG crystals by the EFG method provides a new way to grow other incongruent melting compounds.

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High-frequency Heat Induction Modeling for a Novel Silicon Crystal Growth Method

Proceedings of the VIII International Scientific Colloquium "Modelling for Materials Processing" ◽

10.22364/mmp2017.20 ◽

2017 ◽

Author(s):

Frank Zobel ◽

Johnny Sörensen ◽

Frank Mosel ◽

Peter Dold

Keyword(s):

Crystal Growth ◽

High Frequency ◽

Silicon Crystal ◽

Heat Induction ◽

Growth Method

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Numerical Analysis of Difficulties of Growing Large-Size Bulk β-Ga2O3 Single Crystals with the Czochralski Method

Crystals ◽

10.3390/cryst11010025 ◽

2020 ◽

Vol 11 (1) ◽

pp. 25

Author(s):

Xia Tang ◽

Botao Liu ◽

Yue Yu ◽

Sheng Liu ◽

Bing Gao

Keyword(s):

Crystal Growth ◽

Single Crystals ◽

Czochralski Method ◽

Liquid Interface ◽

Spiral Growth ◽

Growth Time ◽

Large Size ◽

Crystal Diameter ◽

Solid Liquid Interface ◽

Solid Liquid

The difficulties in growing large-size bulk β-Ga2O3 single crystals with the Czochralski method were numerically analyzed. The flow and temperature fields for crystals that were four and six inches in diameter were studied. When the crystal diameter is large and the crucible space becomes small, the flow field near the crystal edge becomes poorly controlled, which results in an unreasonable temperature field, which makes the interface velocity very sensitive to the phase boundary shape. The effect of seed rotation with increasing crystal diameter was also studied. With the increase in crystal diameter, the effect of seed rotation causes more uneven temperature distribution. The difficulty of growing large-size bulk β-Ga2O3 single crystals with the Czochralski method is caused by spiral growth. By using dynamic mesh technology to update the crystal growth interface, the calculation results show that the solid–liquid interface of the four-inch crystal is slightly convex and the center is slightly concave. With the increase of crystal growth time, the symmetry of cylindrical crystal will be broken, which will lead to spiral growth. The numerical results of the six-inch crystal show that the whole solid–liquid interface is concave and unstable, which is not conducive to crystal growth.

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