scholarly journals Automatic determination of the interstitial oxygen content of silicon wafers polished on both sides

1988 ◽  
Author(s):  
Warren K Gladden ◽  
Stephen R Slaughter ◽  
Walter M Duncan ◽  
Aslan Baghdadi
Keyword(s):  
Oxygen Content ◽  
Silicon Wafers ◽  
Interstitial Oxygen ◽  
Automatic Determination

Interlaboratory Determination of the Calibration Factor for the Measurement of the Interstitial Oxygen Content of Silicon by Infrared Absorption

2019 ◽  
Vol 136 (7) ◽  
pp. 2015-2024 ◽  
Author(s):  
A. Baghdadi ◽  
W. M. Bullis ◽  
M. C. Croarkin ◽  
Yue‐zhen Li ◽  
R. I. Scace ◽  
...  
Keyword(s):  
Oxygen Content ◽  
Infrared Absorption ◽  
Calibration Factor ◽  
Interstitial Oxygen

Quantitative Infrared Spectroscopy of Interstitial Oxygen in Silicon Wafers Using Multivariate Calibration

1993 ◽  
Vol 47 (12) ◽  
pp. 2102-2107 ◽  
Author(s):  
J. H. Linn ◽  
K. L. Hanley
Keyword(s):  
Infrared Spectroscopy ◽  
Precision Measurement ◽  
Multivariate Calibration ◽  
Calibration Method ◽  
Silicon Wafers ◽  
Interstitial Oxygen ◽  
Measurement Capability ◽  
Wide Range ◽  
Single Calibration

A PLS multivariate calibration method is used to create a reliable means for the determination of the interstitial oxygen content in silicon wafers. The multivariate calibration, derived from silicon standards with various backside treatments, provides similar precision measurement capability when compared to peak area calibration curves established from individual backside treatments. In this case, the significant advantage of the multivariate calibration is that a single calibration can yield interstitial oxygen results that correlate favorably with vendor values over a wide range (20 to 40 ppma), regardless of the backside condition of the wafers.

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