Determination of Interstitial Oxygen Concentration in Oxygen-Precipitated Silicon Wafers by Low-Temperature High-Resolution Infrared Spectroscopy

1995 ◽  
Vol 34 (Part 2, No. 9A) ◽  
pp. L1097-L1099 ◽  
Author(s):  
Hiroyuki Saito ◽  
Hiroshi Shirai
Keyword(s):  
Infrared Spectroscopy ◽  
High Resolution ◽  
Low Temperature ◽  
Oxygen Concentration ◽  
Silicon Wafers ◽  
Interstitial Oxygen

Quantitative Infrared Spectroscopy of Interstitial Oxygen in Silicon Wafers Using Multivariate Calibration

1993 ◽  
Vol 47 (12) ◽  
pp. 2102-2107 ◽  
Author(s):  
J. H. Linn ◽  
K. L. Hanley
Keyword(s):  
Infrared Spectroscopy ◽  
Precision Measurement ◽  
Multivariate Calibration ◽  
Calibration Method ◽  
Silicon Wafers ◽  
Interstitial Oxygen ◽  
Measurement Capability ◽  
Wide Range ◽  
Single Calibration

A PLS multivariate calibration method is used to create a reliable means for the determination of the interstitial oxygen content in silicon wafers. The multivariate calibration, derived from silicon standards with various backside treatments, provides similar precision measurement capability when compared to peak area calibration curves established from individual backside treatments. In this case, the significant advantage of the multivariate calibration is that a single calibration can yield interstitial oxygen results that correlate favorably with vendor values over a wide range (20 to 40 ppma), regardless of the backside condition of the wafers.

Determination of interstitial oxygen concentration in germanium by infrared absorption

2006 ◽  
Vol 100 (3) ◽  
pp. 033525 ◽  
Author(s):  
V. V. Litvinov ◽  
B. G. Svensson ◽  
L. I. Murin ◽  
J. L. Lindström ◽  
V. P. Markevich ◽  
...  
Keyword(s):  
Oxygen Concentration ◽  
Infrared Absorption ◽  
Interstitial Oxygen

Residual Oxygen Determination In Silicon Epilayer, Comparison With Ftir Measurements

1997 ◽  
Vol 483 ◽  
Author(s):  
F. Degas ◽  
G. Blondiaux ◽  
B. Pichaud
Keyword(s):  
Oxygen Concentration ◽  
Thermal Treatments ◽  
Interstitial Oxygen ◽  
Low Oxygen ◽  
Power Devices ◽  
Oxygen Determination ◽  
Charged Particle Activation Analysis ◽  
Particle Activation ◽  
Low Oxygen Concentration

AbstractFor power devices the use of silicon epilayer on CZ substrate is a solution to make devices with a low oxygen concentration in the active zone. Oxygen is probably one of the most important residual impurities in silicon samples. Usualy the determination of the interstitial oxygen is done by Fourier Transform Infra Red spectroscopy (FTIR). In this work we have determined oxygen by Charged Particle Activation Analysis (CPAA). The main difference between these two techniques is that CPAA gives the total oxygen concentration whereas FTIR gives interstitial oxygen.We have determined the oxygen in 200μm thick silicon epilayer and studied its behavior during thermal treatments. Oxygen concentration is found in the range of 1015/cm3 just after the epitaxial process. After thermal treatment the concentration in the epilayer rose to several 1016/cm3 to 1017/cm3, depending on the treatment. A comparison with FTIR experiment is done and the amount of oxygen precipitate is determined.

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