scholarly journals Dependance of hot-zone position on AlN single crystal growth by PVT method

2016 ◽  
Vol 26 (2) ◽  
pp. 84-88 ◽  
Author(s):  
Gyong-Phil Yin ◽  
Seung-Min Kang
Keyword(s):  
Crystal Growth ◽  
Single Crystal ◽  
Single Crystal Growth ◽  
Hot Zone

Thermal Optimization of Cz Silicon Single Crystal Growth

2009 ◽  
Vol 156-158 ◽  
pp. 217-222 ◽  
Author(s):  
A.I. Prostomolotov ◽  
N.A. Verezub ◽  
M.G. Milvidskii
Keyword(s):  
Crystal Growth ◽  
Single Crystal ◽  
Defect Formation ◽  
Large Diameter ◽  
Single Crystal Growth ◽  
Intrinsic Point Defect ◽  
Thermal Shield ◽  
Internal Cone ◽  
Hot Zone

In an application to large diameter Czochralski (CZ) silicon (Si) single crystal growing the influence on crystal temperature field of various thermal shield assemblies located near to its surface is discussed. By means of mathematical modeling the computer model of thermal processes in an application to a hot zone of "Redmet-90" puller [1], intended for 200 and 300 mm diameter Si single crystal growth is developed. The role of the ring shield and the shield assembly, consisting of two shields (an internal cone and an external one is repeating the crucible shape) and being as a basis of some patents, is investigated. On the basis of the carried out calculations the new thermal shield assembly for "Redmet-90" puller was offered. Its influence on formation of the characteristic thermal zones in growing single crystal, corresponding to defect formation processes in dislocation-free Si crystals (the recombination of intrinsic point defect – IPD, and the formation of their agglomerates) is discussed. The influence of a melt flow on the liquid/solid interface (LSI) shape and thermal stability of crystal growing process is analyzed.

Unsteady 3D and analytical analysis of segregation process in floating zone silicon single crystal growth

2009 ◽  
Vol 45 (4) ◽  
pp. 549-556 ◽  
Author(s):  
K. Lācis ◽  
◽  
A. Muižnieks ◽  
N. Jēkabsons ◽  
A. Rudevičs ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Single Crystal ◽  
Single Crystal Growth ◽  
Silicon Single Crystal ◽  
Floating Zone ◽  
Analytical Analysis ◽  
Segregation Process

scholarly journals Epitaxial Single‐Crystal Growth of Transition Metal Dichalcogenide Monolayers via the Atomic Sawtooth Au Surface

2021 ◽  
pp. 2006601
Author(s):  
Soo Ho Choi ◽  
Hyung‐Jin Kim ◽  
Bumsub Song ◽  
Yong In Kim ◽  
Gyeongtak Han ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Transition Metal ◽  
Single Crystal ◽  
Single Crystal Growth ◽  
Transition Metal Dichalcogenide

scholarly journals Single Crystal Growth and Physical Properties of Pyroxene CoGeO3

Crystals ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 378
Author(s):  
Li Zhao ◽  
Zhiwei Hu ◽  
Hanjie Guo ◽  
Christoph Geibel ◽  
Hong-Ji Lin ◽  
...  
Keyword(s):  
High Pressure ◽  
Magnetic Properties ◽  
Magnetic Susceptibility ◽  
Crystal Growth ◽  
Physical Properties ◽  
Single Crystal ◽  
Single Crystals ◽  
Magnetic Moments ◽  
Single Crystal Growth ◽  
The Impact

We report on the synthesis and physical properties of cm-sized CoGeO3 single crystals grown in a high pressure mirror furnace at pressures of 80 bar. Direction dependent magnetic susceptibility measurements on our single crystals reveal highly anisotropic magnetic properties that we attribute to the impact of strong single ion anisotropy appearing in this system with TN∼33.5 K. Furthermore, we observe effective magnetic moments that are exceeding the spin only values of the Co ions, which reveals the presence of sizable orbital moments in CoGeO3.

scholarly journals Single-Crystal Growth of Sr2RuO4 by the Floating-Zone Method Using an Infrared Image Furnace with Improved Halogen Lamps

Crystals ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 392
Author(s):  
Naoki Kikugawa ◽  
Dmitry A. Sokolov ◽  
Tohru Nagasawa ◽  
Andrew P. Mackenzie
Keyword(s):  
Crystal Growth ◽  
Single Crystal ◽  
Infrared Image ◽  
Single Crystal Growth ◽  
Molten Zone ◽  
Floating Zone ◽  
Unconventional Superconductor ◽  
Zone Method ◽  
Floating Zone Method ◽  
Halogen Lamps

We report the single-crystal growth of the unconventional superconductor Sr2RuO4, on which research has reached a turning point recently. In order to optimize the quality of crystals grown by the floating-zone method using an infrared image furnace, we focus on an improvement of the structure of the filament in the halogen lamps. By reducing the thickness of the total filament, the form of the molten zone was narrowed. More importantly, the molten zone was observed to be more stable during the growth process. Finally, we obtained the crystals with a length of 12 cm. Additionally, the grown crystal has high quality, displaying the 1.5 K transition temperature expected only for the purest crystals. We also discuss the availability of the newly developed halogen lamps.

Sign in / Sign up

Export Citation Format

Share Document