A study of two-dimensional hexagonal phase array grating in MgO:LN based on the Talbot effect

Owing to their peculiar structural characteristics and potential applications in various fields, the ultrathin MoS2 nanosheets, a typical two-dimensional material, have attracted numerous attentions. In this paper, a hybrid strategy with combination of quenching process and liquid-based exfoliation was employed to fabricate the ultrathin MoS2 nanosheets (MoS2 NS). The obtained MoS2 NS still maintained hexagonal phase (2H-MoS2) and exhibited evident thin layer-structure (1–2 layers) with inconspicuous wrinkle. Besides, the MoS2 NS dispersion showed excellent stability (over 60 days) and high concentration (0.65 ± 0.04 mg mL−1). The MoS2 NS dispersion also displayed evident optical properties, with two characteristic peaks at 615 and 670 nm, and could be quantitatively analyzed with the absorbance at 615 nm in the range of 0.01–0.5 mg mL−1. The adsorption experiments showed that the as-prepared MoS2 NS also exhibited remarkable adsorption performance on the dyes (344.8 and 123.5 mg g−1 of qm for methylene blue and methyl orange, respectively) and heavy metals (185.2, 169.5, and 70.4 mg g−1 of qm for Cd2+, Cu2+, and Ag+). During the adsorption, the main adsorption mechanisms involved the synergism of physical hole-filling effects and electrostatic interactions. This work provided an effective way for the large-scale fabrication of the two-dimensional nanosheets of transition metal dichalcogenides (TMDs) by liquid exfoliation.

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A First-Principles Study of Nonlinear Elastic Behavior and Anisotropic Electronic Properties of Two-Dimensional HfS2

Nanomaterials ◽

10.3390/nano10030446 ◽

2020 ◽

Vol 10 (3) ◽

pp. 446

Author(s):

Mahdi Faghihnasiri ◽

Aidin Ahmadi ◽

Samaneh Alvankar Golpayegan ◽

Saeideh Garosi Sharifabadi ◽

Ali Ramazani

Keyword(s):

Electronic Properties ◽

First Principles ◽

Electronic Band Structure ◽

Hexagonal Phase ◽

Strain Engineering ◽

Elastic Behavior ◽

Potential Candidate ◽

Two Dimensional ◽

Electronic Band ◽

Wide Range

We utilize first principles calculations to investigate the mechanical properties and strain-dependent electronic band structure of the hexagonal phase of two dimensional (2D) HfS2. We apply three different deformation modes within −10% to 30% range of two uniaxial (D1, D2) and one biaxial (D3) strains along x, y, and x-y directions, respectively. The harmonic regions are identified in each deformation mode. The ultimate stress for D1, D2, and D3 deformations is obtained as 0.037, 0.038 and 0.044 (eV/Ang3), respectively. Additionally, the ultimate strain for D1, D2, and D3 deformation is obtained as 17.2, 17.51, and 21.17 (eV/Ang3), respectively. In the next step, we determine the second-, third-, and fourth-order elastic constants and the electronic properties of both unstrained and strained HfS2 monolayers are investigated. Our findings reveal that the unstrained HfS2 monolayer is a semiconductor with an indirect bandgap of 1.12 eV. We then tune the bandgap of HfS2 with strain engineering. Our findings reveal how to tune and control the electronic properties of HfS2 monolayer with strain engineering, and make it a potential candidate for a wide range of applications including photovoltaics, electronics and optoelectronics.

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