Effect of increasing gate capacitance on the performance of a p-MoS2/HfS2 van der Waals heterostructure tunneling field-effect transistor

2019 ◽  
Vol 58 (SB) ◽  
pp. SBBH02 ◽  
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Wenlun Zhang ◽  
Seiko Netsu ◽  
Toru Kanazawa ◽  
Tomohiro Amemiya ◽  
Yasuyuki Miyamoto
Crystals ◽  
2017 ◽  
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Jingyu Li ◽  
Xiaozhang Chen ◽  
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Peng Zhou

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Geon-Beom Lee ◽  
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Cheolmin Park ◽  
Hyeok Jun Jin ◽  
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Pritam Deb

Schematic of the magnetic proximity effect in a van der Waals heterostructure formed by a graphene monolayer, induced by its interaction with a two-dimensional ferromagnet (CrBr3) for designing a single-gate field effect transistor.


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