Measurement of Two Dimensional Van Der Waals Materials' Bandgap Using Ambipolar Field Effect Transistor with Graphene Contact and hBN Passivation

2019 ◽  
Vol 21 (46) ◽  
pp. 25788-25796 ◽  
Author(s):  
Sushant Kumar Behera ◽  
Mayuri Bora ◽  
Sapta Sindhu Paul Chowdhury ◽  
Pritam Deb

Schematic of the magnetic proximity effect in a van der Waals heterostructure formed by a graphene monolayer, induced by its interaction with a two-dimensional ferromagnet (CrBr3) for designing a single-gate field effect transistor.


ACS Nano ◽  
2021 ◽  
Author(s):  
Parvin Fathi-Hafshejani ◽  
Nurul Azam ◽  
Lu Wang ◽  
Marcelo A. Kuroda ◽  
Michael C. Hamilton ◽  
...  

2018 ◽  
Vol 114 ◽  
pp. 62-74 ◽  
Author(s):  
R. Ranjith ◽  
Remya Jayachandran ◽  
K.J. Suja ◽  
Rama S. Komaragiri

2021 ◽  
Author(s):  
Qizhi Xu ◽  
Boyuan Zhang ◽  
Yihang Zeng ◽  
Amirali Zangiabadi ◽  
Hongwei Ni ◽  
...  

Ultrathin porous films held together by non-covalent van der Waals interactions was obtained by a top-down approach, which is then utilized as channel material in a two-dimensional planar field-effect transistor device through easy stamp transfer.


2020 ◽  
Vol 12 ◽  
pp. 100174 ◽  
Author(s):  
Ranjit A. Patil ◽  
Hao-Wei Tu ◽  
Ming-Hsing Jen ◽  
Jing-Jia Lin ◽  
Ching-Cherng Wu ◽  
...  

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