Generating and manipulating valley polarization in a controlled method is significant. The inherently broken centrosymmetry of the buckled honeycomb structures gives it both ferroelectricity and valley degree of freedom, which provides an opportunity to realize electrically controlled valley polarization. In the first step, we explored the origin of buckling. The hexagonal structure is polar due to buckling of the surface, but the degree of buckling and the energy barrier to switching electric polarization are determined not solely by the chemical composition. We combined the electronegativity difference, bond length and the distribution of charge density to describe quantificationally the polarity of chemical bonds. It shows the characteristics of relatively long bond-length but relatively small electronegativity-difference. For exploring the ferroelectricity of buckling structures and the behavior of ferroelectric (FE) control of the valley degree of freedom, the [Formula: see text]-GaP is used as a model system to elucidate the strain effect on FE behavior and the magnetic proximity effect on the polarization and switching of valley. We found that the spontaneous polarization is positively correlated with the electronegativity difference within a certain range, and the compression strain can effectively manipulate spontaneous polarization and switch barrier. A combination of the magnetic proximity effect and the inversion of electric polarization can generate and switch valley polarization effectively.
Magnetic Proximity Effect in an Antiferromagnetic Insulator/Topological Insulator Heterostructure with Sharp Interface