Theoretical study on interfacial impact ionization in AlN/GaN periodically stacked structure

2017 ◽  
Vol 10 (7) ◽  
pp. 071002 ◽  
Author(s):  
Jiyuan Zheng ◽  
Lai Wang ◽  
Xingzhao Wu ◽  
Zhibiao Hao ◽  
Changzheng Sun ◽  
...  
2013 ◽  
Vol 27 (29) ◽  
pp. 1350208 ◽  
Author(s):  
AMIR YUSEFLI ◽  
MAHDI ZAVVARI ◽  
KAMBIZ ABEDI

In this paper, we study the intersubband impact ionization through conduction band states of quantum dot (QD) layers of an infrared photodetector. For this purpose, a photogenerated electron moving in high field active region of a p-i-n diode is assumed which can excite an electron from ground state of a QD by carrier–carrier scattering. The generated electron can escape the QD by tunneling and contribute in photocurrent giving avalanche gain to photodetector. The ionization rate and responsivity of detector are calculated from an analytical approach of intersubband transition rate equations. Results show increased responsivity in the order of several A/W.


2001 ◽  
Vol 64 (5) ◽  
Author(s):  
K. Aichele ◽  
W. Arnold ◽  
D. Hathiramani ◽  
F. Scheuermann ◽  
E. Salzborn ◽  
...  

2012 ◽  
Vol 61 (14) ◽  
pp. 143401
Author(s):  
Chen Zhan-Bin ◽  
Liu Li-Juan ◽  
Dong Chen-Zhong

Sign in / Sign up

Export Citation Format

Share Document