Theoretical study of hole initiated impact ionization in bulk silicon and GaAs using a wave‐vector‐dependent numerical transition rate formulation within an ensemble Monte Carlo calculation

1995 ◽  
Vol 77 (1) ◽  
pp. 225-232 ◽  
Author(s):  
İsmail H. Oğuzman ◽  
Yang Wang ◽  
Ján Kolník ◽  
Kevin F. Brennan
Keyword(s):  
Monte Carlo ◽  
Wave Vector ◽  
Transition Rate ◽  
Theoretical Study ◽  
Impact Ionization ◽  
Monte Carlo Calculation ◽  
Bulk Silicon ◽  
Ensemble Monte Carlo ◽  
Rate Formulation

Theoretical Study of Electron Initiated Impact Ionization Rate in Bulk GaN using a Wave Vector Dependent Numerical Transition Rate Formulation

1995 ◽  
Vol 395 ◽  
Author(s):  
J. Kolnik ◽  
I.H. Oguzman ◽  
K.F. Brennan ◽  
R. Wang ◽  
P.P. Ruden
Keyword(s):  
Monte Carlo ◽  
Transition Rate ◽  
Phonon Scattering ◽  
Impact Ionization ◽  
Golden Rule ◽  
Ionization Rate ◽  
Ensemble Monte Carlo ◽  
Bulk Gan ◽  
Impact Ionization Rate ◽  
The Impact

ABSTRACTIn this paper, we present ensemble Monte Carlo based calculations of electron initiated impact ionization in bulk zincblende GaN using a wavevector dependent formulation of the interband impact ionization transition rate. These are the first reported estimates, either theoretical or experimental, of the impact ionization rates in GaN. The transition rate is determined from Fermi’s golden rule for a two-body screened Coulomb interaction using a numerically determined dielectric function as well as by numerically integrating over all of the possible final states. The Monte Carlo simulator includes the full details of the first four conduction bands derived from an empirical pseudopotential calculation as well as all of the relevant phonon scattering mechanisms. It is found that the ionization rate has a relatively "soft" threshold.

THEORETICAL STUDY OF UNIPOLAR INTERSUBBAND IMPACT IONIZATION IN QUANTUM DOT BASED PHOTODETECTORS

2013 ◽  
Vol 27 (29) ◽  
pp. 1350208 ◽  
Author(s):  
AMIR YUSEFLI ◽  
MAHDI ZAVVARI ◽  
KAMBIZ ABEDI
Keyword(s):  
Quantum Dot ◽  
Transition Rate ◽  
Theoretical Study ◽  
Impact Ionization ◽  
Photogenerated Electron ◽  
Ionization Rate ◽  
Rate Equations ◽  
Infrared Photodetector ◽  
Avalanche Gain ◽  
Carrier Scattering

In this paper, we study the intersubband impact ionization through conduction band states of quantum dot (QD) layers of an infrared photodetector. For this purpose, a photogenerated electron moving in high field active region of a p-i-n diode is assumed which can excite an electron from ground state of a QD by carrier–carrier scattering. The generated electron can escape the QD by tunneling and contribute in photocurrent giving avalanche gain to photodetector. The ionization rate and responsivity of detector are calculated from an analytical approach of intersubband transition rate equations. Results show increased responsivity in the order of several A/W.

Calculation of the wave‐vector‐dependent interband impact‐ionization transition rate in wurtzite and zinc‐blende phases of bulk GaN

1996 ◽  
Vol 79 (11) ◽  
pp. 8838-8840 ◽  
Author(s):  
Jan Kolnik ◽  
Ismail H. Oguzman ◽  
Kevin F. Brennan ◽  
R. Wang ◽  
P. Paul Ruden
Keyword(s):  
Wave Vector ◽  
Transition Rate ◽  
Impact Ionization ◽  
Zinc Blende ◽  
Bulk Gan

The gas-liquid transition for 12-6 argon: a grand ensemble Monte Carlo calculation

1980 ◽  
Vol 33 (4) ◽  
pp. 899
Author(s):  
JE Lane ◽  
TH Spurling
Keyword(s):  
Monte Carlo ◽  
Canonical Ensemble ◽  
Monte Carlo Calculation ◽  
Grand Canonical Ensemble ◽  
Previous Calculation ◽  
Ensemble Monte Carlo ◽  
Monte Carlo Calculations ◽  
Lennard Jones ◽  
Liquid Transition ◽  
Grand Canonical

New grand canonical ensemble Monte Carlo calculations of the gas-liquid transition for a Lennard-Jones 12-6 fluid confirm the validity of the previous calculation by Adams.

scholarly journals Ensemble Monte Carlo Study of Electron Transport in Bulk Indium Nitride

1999 ◽  
Vol 4 (S1) ◽  
pp. 781-786
Author(s):  
E. Bellotti ◽  
B. Doshi ◽  
K. F. Brennan ◽  
P. P. Ruden
Keyword(s):  
Monte Carlo ◽  
Electron Transport ◽  
Model Comparison ◽  
Phonon Scattering ◽  
Impact Ionization ◽  
Indium Nitride ◽  
Monte Carlo Model ◽  
Breakdown Field ◽  
Ensemble Monte Carlo ◽  
Full Band

Ensemble Monte Carlo calculations of electron transport at high applied electric field strengths in bulk, wurtzite phase InN are presented. The calculations are performed using a full band Monte Carlo simulation that includes a pseudopotential band structure, all of the relevant phonon scattering agents, and numerically derived impact ionization transition rates. The full details of the first five conduction bands, which extend in energy to about 8 eV above the conduction band minimum, are included in the simulation. The electron initiated impact ionization coefficients and quantum yield are calculated using the full band Monte Carlo model. Comparison is made to previous calculations for bulk GaN and ZnS. It is found that owing to the narrower band gap in InN, a lower breakdown field exists than in either GaN or ZnS.

Grand ensemble Monte Carlo calculation of the thermodynamic properties of a solid/vapour interface

1976 ◽  
Vol 29 (10) ◽  
pp. 2103 ◽  
Author(s):  
JE Lane ◽  
TH Spurling
Keyword(s):  
Monte Carlo ◽  
Thermodynamic Properties ◽  
Particle Distribution ◽  
Canonical Ensemble ◽  
Monte Carlo Calculation ◽  
Distribution Functions ◽  
Surface Phase ◽  
Ensemble Monte Carlo ◽  
Surface Phase Transitions ◽  
Grand Canonical

The thermodynamic properties of the krypton/graphite interface have been evaluated by the grand canonical ensemble Monte Carlo method. Submonolayer adsorption isotherms have been calculated at temperatures of 77.31, 84.11 and 90.12 K, together with particle distribution functions, surface pressures and isosteric heats of adsorption. The results are compared with experiment and discussed in relation to the existence of surface phase transitions. The Monte Carlo adsorptions were used to check the error in assuming Henry's law adsorption at low pressure.

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