Normally-OFF Al2O3/AlGaN/GaN MOS-HEMT on 8 in. Si with Low Leakage Current and High Breakdown Voltage (825 V)

2014 ◽  
Vol 7 (4) ◽  
pp. 041003 ◽  
Author(s):  
Joseph J. Freedsman ◽  
Takashi Egawa ◽  
Yuya Yamaoka ◽  
Yoshiki Yano ◽  
Akinori Ubukata ◽  
...  
Keyword(s):  
Leakage Current ◽  
Breakdown Voltage ◽  
High Breakdown Voltage ◽  
Low Leakage ◽  
Low Leakage Current

Low-leakage-current high-breakdown-voltage InSb p+n diodes

1990 ◽  
Author(s):  
Tai Ping Sun ◽  
Si-Chen Lee ◽  
Kou-Chen Liu ◽  
Sheng-Jehn Yang
Keyword(s):  
Leakage Current ◽  
Breakdown Voltage ◽  
High Breakdown Voltage ◽  
Low Leakage ◽  
Low Leakage Current

Multi channel AlGaN/GaN HEMTs for high breakdown voltage and low leakage current

2004 ◽  
Author(s):  
Seung-Chul Lee ◽  
Jin-Cherl Her ◽  
Min-Woo Ha ◽  
Kwang-Seok Seo ◽  
Min-Koo Han
Keyword(s):  
Leakage Current ◽  
Breakdown Voltage ◽  
High Breakdown Voltage ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Gan Hemts

High breakdown voltage AlGaN/GaN MIS-HFET with low leakage current

2005 ◽  
Vol 2 (7) ◽  
pp. 2647-2650 ◽  
Author(s):  
Masahiko Kuraguchi ◽  
Yoshiharu Takada ◽  
Wataru Saito ◽  
Ichiro Omura ◽  
Kunio Tsuda
Keyword(s):  
Leakage Current ◽  
Breakdown Voltage ◽  
High Breakdown Voltage ◽  
Low Leakage ◽  
Low Leakage Current
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