Multi-Gate Fin Field-Effect Transistors Junctions Optimization by Conventional Ion Implantation for (Sub-)22 nm Technology Nodes Circuit Applications

2011 ◽  
Vol 50 (4S) ◽  
pp. 04DC16 ◽  
Author(s):  
Anabela Veloso ◽  
An De Keersgieter ◽  
Stephan Brus ◽  
Naoto Horiguchi ◽  
Philippe P. Absil ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Technology Nodes

Multi-Gate Fin Field-Effect Transistors Junctions Optimization by Conventional Ion Implantation for (Sub-)22 nm Technology Nodes Circuit Applications

2011 ◽  
Vol 50 (4) ◽  
pp. 04DC16 ◽  
Author(s):  
Anabela Veloso ◽  
An De Keersgieter ◽  
Stephan Brus ◽  
Naoto Horiguchi ◽  
Philippe P. Absil ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Technology Nodes

Threshold voltage adjustment of ferroelectric-gate field effect transistors by ion implantation

2009 ◽  
Vol 24 (2) ◽  
pp. 025012 ◽  
Author(s):  
Qiu-Hong Li ◽  
Takeshi Horiuchi ◽  
Shouyu Wang ◽  
Mitsue Takahashi ◽  
Shigeki Sakai
Keyword(s):  
Ion Implantation ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors

scholarly journals An approach to model and optimization of manufacturing of an enhanced swing differential Colpitts oscillator. on influence of miss-match induced stress

2020 ◽  
Vol 12 (02) ◽  
pp. 12-32
Author(s):  
E.L. Pankratov ◽  
Keyword(s):  
Integrated Circuits ◽  
Ion Implantation ◽  
Heat Transport ◽  
Field Effect ◽  
Analytical Approach ◽  
Field Effect Transistors ◽  
Radiation Defects ◽  
Colpitts Oscillator ◽  
Induced Stress ◽  
Specific Configuration

In this paper we introduce an approach to increase density of field-effect transistors framework an enhanced swing differential Colpitts oscillator. Framework the approach we consider manufacturing the oscillator in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress

scholarly journals On Model of Manufacturing of an Integrated Circuits Based on Hetero-Structures Under Influence of Mismatch-Induced Stress and Porosity of Materials

2021 ◽  
Vol 23 (1) ◽  
pp. 1-53
Author(s):  
E. L. Pankratov ◽  
Keyword(s):  
Integrated Circuits ◽  
Ion Implantation ◽  
Heat Transport ◽  
Field Effect ◽  
Analytical Approach ◽  
Field Effect Transistors ◽  
Radiation Defects ◽  
Induced Stress ◽  
Specific Configuration

In this paper, we introduce an approach to increase density of field-effect transistors framework a downconversion mixer circuit. Framework the approach we consider manufacturing the mixer in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should be annealed by framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.

scholarly journals AlN metal–semiconductor field-effect transistors using Si-ion implantation

2018 ◽  
Vol 57 (4S) ◽  
pp. 04FR11 ◽  
Author(s):  
Hironori Okumura ◽  
Sami Suihkonen ◽  
Jori Lemettinen ◽  
Akira Uedono ◽  
Yuhao Zhang ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Si Ion Implantation
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