Characterization of In20Ge15Sb10Te55Phase Change Material for Phase Change Memory with Low Power Operation and Good Data Retention

2012 ◽  
Vol 51 (3R) ◽  
pp. 031201
Author(s):  
Takahiro Morikawa ◽  
Kenzo Kurotsuchi ◽  
Yoshihisa Fujisaki ◽  
Yuichi Matsui ◽  
Norikatsu Takaura
Keyword(s):  
Low Power ◽  
Phase Change ◽  
Phase Change Memory ◽  
Data Retention ◽  
Good Data ◽  
Power Operation ◽  
Change Material ◽  
Change Memory

Characterization of In$_{20}$Ge$_{15}$Sb$_{10}$Te$_{55}$ Phase Change Material for Phase Change Memory with Low Power Operation and Good Data Retention

2012 ◽  
Vol 51 ◽  
pp. 031201 ◽  
Author(s):  
Takahiro Morikawa ◽  
Kenzo Kurotsuchi ◽  
Yoshihisa Fujisaki ◽  
Yuichi Matsui ◽  
Norikatsu Takaura
Keyword(s):  
Low Power ◽  
Phase Change ◽  
Phase Change Material ◽  
Phase Change Memory ◽  
Data Retention ◽  
Good Data ◽  
Power Operation ◽  
Change Material ◽  
Change Memory

Si2Sb2Te6Phase Change Material for Low-Power Phase Change Memory Application

2009 ◽  
Vol 2 (9) ◽  
pp. 091401 ◽  
Author(s):  
Xilin Zhou ◽  
Liangcai Wu ◽  
Zhitang Song ◽  
Feng Rao ◽  
Bo Liu ◽  
...  
Keyword(s):  
Low Power ◽  
Phase Change ◽  
Phase Change Memory ◽  
Change Material ◽  
Change Memory

Ga2Te3 phase change material for low-power phase change memory application

2010 ◽  
Vol 97 (8) ◽  
pp. 083504 ◽  
Author(s):  
Hao Zhu ◽  
Jiang Yin ◽  
Yidong Xia ◽  
Zhiguo Liu
Keyword(s):  
Low Power ◽  
Phase Change ◽  
Phase Change Material ◽  
Phase Change Memory ◽  
Change Material ◽  
Change Memory

Data Retention Characterization of Phase-Change Memory Arrays

2007 ◽  
Author(s):  
B. Gleixner ◽  
A. Pirovano ◽  
J. Sarkar ◽  
F. Ottogalli ◽  
E. Tortorelli ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Data Retention ◽  
Memory Arrays ◽  
Change Memory

Carbon-Doped Sb-Rich Ge-Sb-Te Phase Change Material for High Speed and High Thermal Stability Phase Change Memory Applications

2017 ◽  
Vol 898 ◽  
pp. 1834-1838
Author(s):  
Tao Li ◽  
Liang Cai Wu ◽  
Zhi Tang Song ◽  
San Nian Song ◽  
Feng Rao ◽  
...  
Keyword(s):  
Phase Change ◽  
High Speed ◽  
Phase Change Memory ◽  
Data Retention ◽  
Carbon Doped ◽  
Sputtering Power ◽  
Memory Applications ◽  
Change Material ◽  
High Crystallization Temperature ◽  
Change Memory

Carbon-doped Sb-rich Ge-Sb-Te (Sb-CGST) is proved to be a promising candidate for phase change memory because of it high crystallization temperature (higher than 200°C) and 10-year data retention temperature (higher than 120°C). The carbon-doped Sb-rich Ge-Sb-Te (Sb-CGST) films were deposited on SiO2/Si (100) substrate by RF magnetron co-sputtering using CGST alloy target (a GST target containing 16 at. % C) and Sb targets at room temperature. The content of Sb in the films was controlled by adjusting the sputtering power ratio of CGST and Sb. The results showed that both of these two properties increase firstly and then decreases with increasing the content of Sb, which are superior to that of Ge2Sb2Te5. Furthermore, Sb-CGST based PCM cells were fabricated to investigate the property of material. 6ns pulse could realize SET operation, and 3.2 x 10-11J energy can realize RESET operation.

Investigation of Al-Sb-Se alloy for long data retention and low power consumption phase change memory application

2014 ◽  
Vol 116 (7) ◽  
pp. 074304 ◽  
Author(s):  
Zhonghua Zhang ◽  
Yifeng Gu ◽  
Sannian Song ◽  
Zhitang Song ◽  
Yan Cheng ◽  
...  
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Phase Change ◽  
Phase Change Memory ◽  
Low Power Consumption ◽  
Data Retention ◽  
Change Memory

Phase-Change Memory Device Using Si-Sb-Te Film for Low Power Operation and Multibit Storage

2006 ◽  
Vol 36 (1) ◽  
pp. 88-91 ◽  
Author(s):  
Baowei Qiao ◽  
Jie Feng ◽  
Yunfeng Lai ◽  
Yanfei Cai ◽  
Yinyin Lin ◽  
...  
Keyword(s):  
Low Power ◽  
Phase Change ◽  
Phase Change Memory ◽  
Memory Device ◽  
Power Operation ◽  
Change Memory
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