Phase-Change Memory Device Using Si-Sb-Te Film for Low Power Operation and Multibit Storage

2006 ◽  
Vol 36 (1) ◽  
pp. 88-91 ◽  
Author(s):  
Baowei Qiao ◽  
Jie Feng ◽  
Yunfeng Lai ◽  
Yanfei Cai ◽  
Yinyin Lin ◽  
...  
Keyword(s):  
Low Power ◽  
Phase Change ◽  
Phase Change Memory ◽  
Memory Device ◽  
Power Operation ◽  
Change Memory

Characterization of In$_{20}$Ge$_{15}$Sb$_{10}$Te$_{55}$ Phase Change Material for Phase Change Memory with Low Power Operation and Good Data Retention

2012 ◽  
Vol 51 ◽  
pp. 031201 ◽  
Author(s):  
Takahiro Morikawa ◽  
Kenzo Kurotsuchi ◽  
Yoshihisa Fujisaki ◽  
Yuichi Matsui ◽  
Norikatsu Takaura
Keyword(s):  
Low Power ◽  
Phase Change ◽  
Phase Change Material ◽  
Phase Change Memory ◽  
Data Retention ◽  
Good Data ◽  
Power Operation ◽  
Change Material ◽  
Change Memory

Characterization of In20Ge15Sb10Te55Phase Change Material for Phase Change Memory with Low Power Operation and Good Data Retention

2012 ◽  
Vol 51 (3R) ◽  
pp. 031201
Author(s):  
Takahiro Morikawa ◽  
Kenzo Kurotsuchi ◽  
Yoshihisa Fujisaki ◽  
Yuichi Matsui ◽  
Norikatsu Takaura
Keyword(s):  
Low Power ◽  
Phase Change ◽  
Phase Change Memory ◽  
Data Retention ◽  
Good Data ◽  
Power Operation ◽  
Change Material ◽  
Change Memory

A Phase Change Memory Device Fabrication Technology Using Si2Sb2Te6 for Low Power Consumption Application

2019 ◽  
Vol 34 (1) ◽  
pp. 1053-1057 ◽  
Author(s):  
Ying Li ◽  
Xudong Wan ◽  
Zhitang Song ◽  
Joseph Xie ◽  
Bomy Chenc ◽  
...  
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Phase Change ◽  
Phase Change Memory ◽  
Memory Device ◽  
Device Fabrication ◽  
Low Power Consumption ◽  
Fabrication Technology ◽  
Change Memory

Si2Sb2Te6Phase Change Material for Low-Power Phase Change Memory Application

2009 ◽  
Vol 2 (9) ◽  
pp. 091401 ◽  
Author(s):  
Xilin Zhou ◽  
Liangcai Wu ◽  
Zhitang Song ◽  
Feng Rao ◽  
Bo Liu ◽  
...  
Keyword(s):  
Low Power ◽  
Phase Change ◽  
Phase Change Memory ◽  
Change Material ◽  
Change Memory

Ultra-Long Retention and Low Power Consumption of Superlattice-Like Ge50Te50/Ge Thin Films for Phase Change Memory Application

2019 ◽  
Vol 8 (10) ◽  
pp. P563-P566
Author(s):  
Jianhao Zhang ◽  
Yifeng Hu ◽  
Rui Zhang ◽  
Hua Zou ◽  
Jianzhong Xue ◽  
...  
Keyword(s):  
Thin Films ◽  
Power Consumption ◽  
Low Power ◽  
Phase Change ◽  
Phase Change Memory ◽  
Low Power Consumption ◽  
Change Memory

scholarly journals Thermal investigation of a phase change memory device at the nanoscale

2016 ◽  
Vol 745 ◽  
pp. 032098
Author(s):  
Jean-Luc Battaglia ◽  
Indrayush De ◽  
Abdelhak Saci ◽  
Andrzej Kusiak ◽  
Véronique Sousa
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Memory Device ◽  
Thermal Investigation ◽  
Change Memory

Global and local structures of the Ge-Sb-Te ternary alloy system for a phase-change memory device

2006 ◽  
Vol 73 (21) ◽  
Author(s):  
Jae-Hyeon Eom ◽  
Young-Gui Yoon ◽  
Changwon Park ◽  
Hoonkyung Lee ◽  
Jino Im ◽  
...  
Keyword(s):  
Phase Change ◽  
Ternary Alloy ◽  
Phase Change Memory ◽  
Alloy System ◽  
Memory Device ◽  
Ternary Alloy System ◽  
Local Structures ◽  
Global And Local ◽  
Change Memory

scholarly journals Low Power Phase Change Memory With Vertical Carbon Nanotube Electrode

2017 ◽  
Vol 5 (5) ◽  
pp. 362-366
Author(s):  
Panni Wang ◽  
Yihan Chen ◽  
Suwen Li ◽  
Salahuddin Raju ◽  
Longyan Wang ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Low Power ◽  
Phase Change ◽  
Phase Change Memory ◽  
Change Memory
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