Investigation of Al-Sb-Se alloy for long data retention and low power consumption phase change memory application

2014 ◽  
Vol 116 (7) ◽  
pp. 074304 ◽  
Author(s):  
Zhonghua Zhang ◽  
Yifeng Gu ◽  
Sannian Song ◽  
Zhitang Song ◽  
Yan Cheng ◽  
...  
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Phase Change ◽  
Phase Change Memory ◽  
Low Power Consumption ◽  
Data Retention ◽  
Change Memory

Superlattice-like Ge 8 Sb 92 /Ge thin films for high speed and low power consumption phase change memory application

2014 ◽  
Vol 93 ◽  
pp. 4-7 ◽  
Author(s):  
Yifeng Hu ◽  
Xiaoyi Feng ◽  
Jiwei Zhai ◽  
Ting Wen ◽  
Tianshu Lai ◽  
...  
Keyword(s):  
Thin Films ◽  
Power Consumption ◽  
Low Power ◽  
Phase Change ◽  
High Speed ◽  
Phase Change Memory ◽  
Low Power Consumption ◽  
Change Memory

Scandium doped Ge2Sb2Te5 for high-speed and low-power-consumption phase change memory

2018 ◽  
Vol 112 (13) ◽  
pp. 133104 ◽  
Author(s):  
Yong Wang ◽  
Yonghui Zheng ◽  
Guangyu Liu ◽  
Tao Li ◽  
Tianqi Guo ◽  
...  
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Phase Change ◽  
High Speed ◽  
Phase Change Memory ◽  
Low Power Consumption ◽  
Change Memory

Orbital-selective electronic excitation in phase-change memory materials: a brief review

2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Nian-Ke Chen ◽  
Bai-Qian Wang ◽  
Xue-Peng Wang ◽  
Xian-Bin Li
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Phase Change ◽  
Electronic Excitation ◽  
Phase Change Memory ◽  
New Physics ◽  
Heat Diffusion ◽  
Low Power Consumption ◽  
Structural Transitions ◽  
Change Memory

Abstract Ultrafast laser-induced phase/structural transitions show a great potential in optical memory and optical computing technologies, which are believed to have advantages of ultrafast speed, low power consumption, less heat diffusion and remote control as compared with electronic devices. Here, we review and discuss the principles of orbital-selective electronic excitation and its roles in phase/structural transitions of phase-change memory (PCM) materials, including Sc0.2Sb1.8Te3 and GeTe phases. It is demonstrated, that the mechanism can influence the dynamics or results of structural transitions, such as an ultrafast amorphization of Sc0.2Sb1.8Te3 and a non-volatile order-to-order structural transition of GeTe. Without thermal melting, these structural transitions have the advantages of ultrafast speed and low power consumption. It suggests that the orbital-selective electronic excitation can play a significant role in discovering new physics of phase change and shows a potential for new applications.

Application of ordered mesoporous SiO2 film for low power consumption in phase-change memory

2012 ◽  
Vol 163 ◽  
pp. 321-325 ◽  
Author(s):  
Tae-Jung Ha ◽  
Hyung Keun Kim ◽  
Doo Jin Choi ◽  
Sangwoo Shin ◽  
Hyung Hee Cho ◽  
...  
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Phase Change ◽  
Phase Change Memory ◽  
Sio2 Film ◽  
Low Power Consumption ◽  
Ordered Mesoporous ◽  
Mesoporous Sio2 ◽  
Change Memory

A Phase Change Memory Device Fabrication Technology Using Si2Sb2Te6 for Low Power Consumption Application

2019 ◽  
Vol 34 (1) ◽  
pp. 1053-1057 ◽  
Author(s):  
Ying Li ◽  
Xudong Wan ◽  
Zhitang Song ◽  
Joseph Xie ◽  
Bomy Chenc ◽  
...  
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Phase Change ◽  
Phase Change Memory ◽  
Memory Device ◽  
Device Fabrication ◽  
Low Power Consumption ◽  
Fabrication Technology ◽  
Change Memory
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