High-Density and Low-Power Nonvolatile Static Random Access Memory Using Spin-Transfer-Torque Magnetic Tunnel Junction

2012 ◽  
Vol 51 (2) ◽  
pp. 02BD01 ◽  
Author(s):  
Takashi Ohsawa ◽  
Fumitaka Iga ◽  
Shoji Ikeda ◽  
Takahiro Hanyu ◽  
Hideo Ohno ◽  
...  
SPIN ◽  
2012 ◽  
Vol 02 (03) ◽  
pp. 1240001 ◽  
Author(s):  
ZIHUI WANG ◽  
YUCHEN ZHOU ◽  
JING ZHANG ◽  
YIMING HUAI

This paper reviews the recent progress made to realize reliable write operations in spin transfer torque magnetic random access memory. Theoretical description of write error rate (WER) based on macro-spin models are discussed with comparison to experimental data. Recent studies on the phenomena that can lead to abnormal WER behaviors which include back-hopping and low probability bifurcated switching are reviewed with emphasis on underlying mechanism. The studies on the WER in perpendicular magnetic tunnel junction (MTJ) are also reviewed. It is demonstrated that, for both in-plane and perpendicular MTJ, reliable and error-free write operations can be achieved with thorough understanding of the underlying physics and innovative design/process solutions.


2002 ◽  
Vol 91 (8) ◽  
pp. 5246-5249 ◽  
Author(s):  
Naoki Nishimura ◽  
Tadahiko Hirai ◽  
Akio Koganei ◽  
Takashi Ikeda ◽  
Kazuhisa Okano ◽  
...  

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