Structural and electrical transport properties of MOVPE-grown pseudomorphic AlAs/InGaAs/InAs resonant tunneling diodes on InP substrates

2014 ◽  
Vol 53 (3) ◽  
pp. 031202 ◽  
Author(s):  
Hiroki Sugiyama ◽  
Atsushi Teranishi ◽  
Safumi Suzuki ◽  
Masahiro Asada
Keyword(s):  
Transport Properties ◽  
Electrical Transport ◽  
Resonant Tunneling ◽  
Resonant Tunneling Diodes ◽  
Electrical Transport Properties ◽  
Tunneling Diodes ◽  
Inp Substrates

Transport properties of gated resonant tunneling diodes in the single electron regime

1998 ◽  
Vol 84 (12) ◽  
pp. 6718-6724 ◽  
Author(s):  
M. Griebel ◽  
K. M. Indlekofer ◽  
A. Förster ◽  
H. Lüth
Keyword(s):  
Transport Properties ◽  
Resonant Tunneling ◽  
Single Electron ◽  
Resonant Tunneling Diodes ◽  
Tunneling Diodes

Nanofabricated SiO2-Si-SiO2 Resonant Tunneling Diodes

2000 ◽  
Vol 631 ◽  
Author(s):  
J. G. Fleming ◽  
E. Chow ◽  
S.-Y. Lin
Keyword(s):  
Integrated Circuits ◽  
Integrated Circuit ◽  
Resonant Tunneling ◽  
Resonant Tunneling Diodes ◽  
Resonance Tunneling ◽  
Tunneling Diodes

ABSTRACTResonance Tunneling Diodes (RTDs) are devices that can demonstrate very highspeed operation. Typically they have been fabricated using epitaxial techniques and materials not consistent with standard commercial integrated circuits. We report here the first demonstration of SiO2-Si-SiO2 RTDs. These new structures were fabricated using novel combinations of silicon integrated circuit processes.

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