High temperature behavior of multi-region direct current current–voltage spectroscopy and relationship with shallow-trench-isolation-based high-voltage laterally diffused metal–oxide–semiconductor field-effect-transistors reliability

Yandong He; Ganggang Zhang; Xing Zhang

doi:10.7567/jjap.53.04ec12

High temperature behavior of multi-region direct current current–voltage spectroscopy and relationship with shallow-trench-isolation-based high-voltage laterally diffused metal–oxide–semiconductor field-effect-transistors reliability

Japanese Journal of Applied Physics ◽

10.7567/jjap.53.04ec12 ◽

2014 ◽

Vol 53 (4S) ◽

pp. 04EC12

Author(s):

Yandong He ◽

Ganggang Zhang ◽

Xing Zhang

Keyword(s):

High Temperature ◽

High Voltage ◽

Direct Current ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Shallow Trench Isolation ◽

Current Voltage ◽

Trench Isolation

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Investigation of Hot Carrier Degradation in Shallow-Trench-Isolation-Based High-Voltage Laterally Diffused Metal–Oxide–Semiconductor Field-Effect Transistors by a Novel Direct Current Current–Voltage Technique

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.04dp08 ◽

2012 ◽

Vol 51 (4S) ◽

pp. 04DP08 ◽

Cited By ~ 1

Author(s):

Yandong He ◽

Ganggang Zhang

Keyword(s):

High Voltage ◽

Direct Current ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Shallow Trench Isolation ◽

Hot Carrier ◽

Current Voltage ◽

Trench Isolation

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Investigation of Hot Carrier Degradation in Shallow-Trench-Isolation-Based High-Voltage Laterally Diffused Metal–Oxide–Semiconductor Field-Effect Transistors by a Novel Direct Current Current–Voltage Technique

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.04dp08 ◽

2012 ◽

Vol 51 ◽

pp. 04DP08 ◽

Cited By ~ 1

Author(s):

Yandong He ◽

Ganggang Zhang

Keyword(s):

High Voltage ◽

Direct Current ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Shallow Trench Isolation ◽

Hot Carrier ◽

Current Voltage ◽

Trench Isolation

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Correlation between Charge Pumping Method and Direct-Current Current Voltage Method in p-Type Metal-Oxide-Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.38.4696 ◽

1999 ◽

Vol 38 (Part 1, No. 8) ◽

pp. 4696-4698 ◽

Cited By ~ 6

Author(s):

Bin-Bin Jie ◽

Kok-Hooi Ng ◽

Ming-Fu Li ◽

Keng-Foo Lo

Keyword(s):

Metal Oxide ◽

Direct Current ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Charge Pumping ◽

Current Voltage ◽

P Type

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Impact of Reducing Shallow Trench Isolation Mechanical Stress on Active Length for 40 nm n-Type Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.50.04dc21 ◽

2011 ◽

Vol 50 (4S) ◽

pp. 04DC21 ◽

Cited By ~ 1

Author(s):

Yao-Tsung Huang ◽

San-Lein Wu ◽

Hau-Yu Lin ◽

Cheng-Wen Kuo ◽

Shoou-Jinn Chang ◽

...

Keyword(s):

Metal Oxide ◽

Mechanical Stress ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Shallow Trench Isolation ◽

Active Length ◽

Trench Isolation

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Remarkable Effects of Introduction of SiON Materials into Shallow Trench Isolation Fabrication Process on Metal-Oxide-Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.40.462 ◽

2001 ◽

Vol 40 (Part 1, No. 2A) ◽

pp. 462-466 ◽

Cited By ~ 2

Author(s):

Katsuomi Shiozawa ◽

Toshiyuki Oishi ◽

Yuji Abe ◽

Yasunori Tokuda

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Fabrication Process ◽

Oxide Semiconductor ◽

Shallow Trench Isolation ◽

Trench Isolation

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Impact of Reducing Shallow Trench Isolation Mechanical Stress on Active Length for 40 nm n-Type Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.50.04dc21 ◽

2011 ◽

Vol 50 (4) ◽

pp. 04DC21 ◽

Cited By ~ 1

Author(s):

Yao-Tsung Huang ◽

San-Lein Wu ◽

Hau-Yu Lin ◽

Cheng-Wen Kuo ◽

Shoou-Jinn Chang ◽

...

Keyword(s):

Metal Oxide ◽

Mechanical Stress ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Shallow Trench Isolation ◽

Active Length ◽

Trench Isolation

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Reproducing Subthreshold Characteristics of Metal-Oxide-Semiconductor Field Effect Transistors under Shallow Trench Isolation Mechanical Stress Using a Stress-Dependent Diffusion Model

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.l849 ◽

2006 ◽

Vol 45 (No. 32) ◽

pp. L849-L851

Author(s):

Yi-Ming Sheu ◽

Sheng-Jier Yang ◽

Chih-Chiang Wang ◽

Chih-Sheng Chang ◽

Ming-Jer Chen ◽

...

Keyword(s):

Metal Oxide ◽

Mechanical Stress ◽

Diffusion Model ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Shallow Trench Isolation ◽

Trench Isolation ◽

Stress Dependent

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Temperature Dependence of Shallow-Trench-Isolation Mechanical Stress on n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.4161 ◽

2004 ◽

Vol 43 (7A) ◽

pp. 4161-4162

Author(s):

Jinn-Horng Lai ◽

Jeng Gong ◽

Tsuoe-Hsiang Liao ◽

David Cheng-Hsiung Chen

Keyword(s):

Metal Oxide ◽

Temperature Dependence ◽

Mechanical Stress ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Shallow Trench Isolation ◽

Trench Isolation

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High-temperature modeling and characterization of 6H silicon carbide metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1849424 ◽

2005 ◽

Vol 97 (4) ◽

pp. 046106 ◽

Cited By ~ 4

Author(s):

Stephen K. Powell ◽

Neil Goldsman ◽

Aivars Lelis ◽

James M. McGarrity ◽

Flynn B. McLean

Keyword(s):

Silicon Carbide ◽

High Temperature ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Temperature Modeling

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Investigation of extra traps measured by charge pumping technique in high voltage zone in p-channel metal-oxide-semiconductor field-effect transistors with HfO2/metal gate stacks

Applied Physics Letters ◽

10.1063/1.4773914 ◽

2013 ◽

Vol 102 (1) ◽

pp. 012106 ◽

Cited By ~ 4

Author(s):

Szu-Han Ho ◽

Ting-Chang Chang ◽

Bin-Wei Wang ◽

Ying-Shin Lu ◽

Wen-Hung Lo ◽

...

Keyword(s):

Metal Oxide ◽

High Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stacks ◽

Metal Gate ◽

Charge Pumping

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