Study on interface characteristics in amorphous indium–gallium–zinc oxide thin-film transistors by using low-frequency noise and temperature dependent mobility measurements

2015 ◽  
Vol 109 ◽  
pp. 37-41 ◽  
Author(s):  
Chenfei Wu ◽  
Xiaoming Huang ◽  
Hai Lu ◽  
Guang Yu ◽  
Fangfang Ren ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Low Frequency ◽  
Oxide Thin Film ◽  
Frequency Noise ◽  
Indium Gallium Zinc Oxide ◽  
Zinc Oxide Thin Film ◽  
Temperature Dependent ◽  
Interface Characteristics ◽  
Indium Gallium

Low-Frequency Noise in Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistors

2009 ◽  
Vol 30 (5) ◽  
pp. 505-507 ◽  
Author(s):  
Jeong-Min Lee ◽  
Woo-Seok Cheong ◽  
Chi-Sun Hwang ◽  
In-Tak Cho ◽  
Hyuck-In Kwon ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Low Frequency ◽  
Oxide Thin Film ◽  
Frequency Noise ◽  
Indium Gallium Zinc Oxide ◽  
Low Frequency Noise ◽  
Zinc Oxide Thin Film ◽  
Indium Gallium

Low-frequency noise in amorphous indium-gallium-zinc oxide thin-film transistors from subthreshold to saturation

2010 ◽  
Vol 97 (12) ◽  
pp. 122104 ◽  
Author(s):  
Jae Chul Park ◽  
Sang Wook Kim ◽  
Chang Jung Kim ◽  
Sungchul Kim ◽  
Dae Hwan Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Low Frequency ◽  
Oxide Thin Film ◽  
Frequency Noise ◽  
Indium Gallium Zinc Oxide ◽  
Low Frequency Noise ◽  
Zinc Oxide Thin Film ◽  
Indium Gallium
Sign in / Sign up

Export Citation Format

Share Document