Theoretical study of fabrication of line-and-space patterns with 7 nm quarter-pitch (7 nm space width and 21 nm line width) using electron beam lithography with chemically amplified resist processes: I. Relationship between sensitivity and chemical gradient

2015 ◽  
Vol 54 (5) ◽  
pp. 056501 ◽  
Author(s):  
Takahiro Kozawa
Keyword(s):  
Electron Beam ◽  
Line Width ◽  
Electron Beam Lithography ◽  
Theoretical Study ◽  
Chemical Gradient ◽  
Chemically Amplified ◽  
Chemically Amplified Resist ◽  
Space Width

Sub-150-nm electron-beam lithography using AZPN114 chemically amplified resist

1997 ◽  
Author(s):  
Zheng Cui ◽  
R. A. Moody ◽  
Ian M. Loader ◽  
John G. Watson ◽  
Philip D. Prewett
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Chemically Amplified ◽  
Chemically Amplified Resist

Edge Roughness Study of Chemically Amplified Resist in Low-Energy Electron-Beam Lithography Using Computer Simulation

2002 ◽  
Vol 41 (Part 1, No. 6B) ◽  
pp. 4157-4162 ◽  
Author(s):  
Tetsuro Nakasugi ◽  
Atsushi Ando ◽  
Ryoichi Inanami ◽  
Noriaki Sasaki ◽  
Kazuyoshi Sugihara ◽  
...  
Keyword(s):  
Computer Simulation ◽  
Electron Beam ◽  
Electron Beam Lithography ◽  
Low Energy ◽  
Energy Electron ◽  
Chemically Amplified ◽  
Edge Roughness ◽  
Chemically Amplified Resist ◽  
Low Energy Electron
Sign in / Sign up

Export Citation Format

Share Document