Threshold voltage control for organic thin-film transistors using a tri-gate structure with capacitive coupling

2017 ◽  
Vol 56 (4S) ◽  
pp. 04CL01
Author(s):  
Sunghoon Lee ◽  
Tomoyuki Yokota ◽  
Takao Someya
2009 ◽  
Vol 94 (8) ◽  
pp. 083310 ◽  
Author(s):  
Masatoshi Kitamura ◽  
Yasutaka Kuzumoto ◽  
Shigeru Aomori ◽  
Masakazu Kamura ◽  
Jong Ho Na ◽  
...  

2021 ◽  
Vol 68 (3) ◽  
pp. 1088-1092
Author(s):  
Kareem Mansour ◽  
Samar Elsaegh ◽  
Ute Zschieschang ◽  
Hagen Klauk ◽  
Ghada H. Ibrahim

Author(s):  
Benjamin King ◽  
Andrew J. Daszczynski ◽  
Nicole A. Rice ◽  
Alexander J. Peltekoff ◽  
Nathan J. Yutronkie ◽  
...  

2015 ◽  
Vol 117 (18) ◽  
pp. 185501 ◽  
Author(s):  
Cong Feng ◽  
Ognian Marinov ◽  
M. Jamal Deen ◽  
Ponnambalam Ravi Selvaganapathy ◽  
Yiliang Wu

2007 ◽  
Vol 124-126 ◽  
pp. 383-386
Author(s):  
Jae Bon Koo ◽  
Jung Wook Lim ◽  
Chan Hoe Ku ◽  
Sang Chul Lim ◽  
Jung Hun Lee ◽  
...  

We report on the fabrication of dual-gate pentacene organic thin-film transistors (OTFTs) using a plasma-enhanced atomic layer deposited (PEALD) 150 nm thick Al2O3 as a bottom gate dielectric and a 300 nm thick parylene or a PEALD 200 nm thick Al2O3 as both a top gate dielectric and a passivation layer. The threshold voltage (Vth) of OTFT with a 300 nm thick parylene as a top gate dielectric is changed from 4.7 V to 1.3 V and that with a PEALD 200 nm thick Al2O3 as a top gate dielectric is changed from 1.95 V to -9.8 V when the voltage bias of top gate electrode is changed from -10 V to 10 V. The change of Vth of OTFT with the dual-gate structure has been successfully understood by an analysis of electrostatic potential.


2010 ◽  
Vol 22 (47) ◽  
pp. 5361-5365 ◽  
Author(s):  
Marco Marchl ◽  
Matthias Edler ◽  
Anja Haase ◽  
Alexander Fian ◽  
Gregor Trimmel ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document