Pentacene Organic Thin-Film Transistors with Dual-Gate Structure
2007 ◽
Vol 124-126
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pp. 383-386
Keyword(s):
We report on the fabrication of dual-gate pentacene organic thin-film transistors (OTFTs) using a plasma-enhanced atomic layer deposited (PEALD) 150 nm thick Al2O3 as a bottom gate dielectric and a 300 nm thick parylene or a PEALD 200 nm thick Al2O3 as both a top gate dielectric and a passivation layer. The threshold voltage (Vth) of OTFT with a 300 nm thick parylene as a top gate dielectric is changed from 4.7 V to 1.3 V and that with a PEALD 200 nm thick Al2O3 as a top gate dielectric is changed from 1.95 V to -9.8 V when the voltage bias of top gate electrode is changed from -10 V to 10 V. The change of Vth of OTFT with the dual-gate structure has been successfully understood by an analysis of electrostatic potential.
2020 ◽
Vol 7
(10)
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pp. 1902145
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2007 ◽
pp. 383-386
Keyword(s):
2011 ◽
Vol 50
◽
pp. 01BC04
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Keyword(s):
2019 ◽
Vol 48
(7)
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pp. 4491-4497
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2010 ◽
Vol 11
(11)
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pp. 1719-1722
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Keyword(s):
Keyword(s):
2020 ◽
Vol 2
(9)
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pp. 2813-2818
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2019 ◽
Vol 7
(19)
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pp. 5821-5829
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