Study of the Effects of GaN Buffer Layer Quality on the dc
Characteristics of AlGaN/GaN High Electron Mobility Transistors
2015 ◽
Vol 33
(3)
◽
pp. 031210
◽
Shihyun Ahn
◽
Weidi Zhu
◽
Chen Dong
◽
Lingcong Le
◽
Ya-Hsi Hwang
◽
...
2015 ◽
Vol 69
(14)
◽
pp. 103-108
◽
S. Ahn
◽
W. Zhu
◽
C. Dong
◽
Y.-H. Hwang
◽
B.-J. Kim
◽
...
2019 ◽
Vol 45
(8)
◽
pp. 761-764
T. V. Malin
◽
D. S. Milakhin
◽
I. A. Aleksandrov
◽
V. E. Zemlyakov
◽
V. I. Egorkin
◽
...
2014 ◽
Vol 115
(6)
◽
pp. 064504
◽
C. Hodges
◽
J. Pomeroy
◽
M. Kuball
2006 ◽
Vol 3
(6)
◽
pp. 2373-2376
◽
T. Aggerstam
◽
M. Sjödin
◽
S. Lourdudoss
2016 ◽
Vol 56
(1)
◽
pp. 015502
◽
Kwangse Ko
◽
Kyeongjae Lee
◽
Byeongchan So
◽
Cheon Heo
◽
Kyungbae Lee
◽
...
2009 ◽
Vol 48
(12)
◽
pp. 121002
◽
Josephine Selvaraj
◽
S. Lawrence Selvaraj
◽
Takashi Egawa
2010 ◽
Vol 40
(4)
◽
pp. 362-368
Valerio Di Lecce
◽
Michele Esposto
◽
Matteo Bonaiuti
◽
Fausto Fantini
◽
Gaudenzio Meneghesso
◽
...
2017 ◽
Vol 56
(10)
◽
pp. 108003
◽
Yuuki Kawada
◽
Hideyuki Hanawa
◽
Kazushige Horio
2012 ◽
Vol 30
(3)
◽
pp. 031202
◽
Chien-Fong Lo
◽
L. Liu
◽
T. S. Kang
◽
Fan Ren
◽
C. Schwarz
◽
...