Contact effects analyzed by a parameter extraction method based on a single bottom-gate/top-contact organic thin-film transistor

For what is believed to be for the first time, the device physics based modeling approach to derive the generic model current equations of organic thin film transistor (OTFT) is described. Firstly, the current model equation is derived by considering the dependence of mobility on gate voltage and doping density, which is more realistic and relevant to organic materials containing TFTs. To model small molecule or polymer TFT, the potential drop across contacts is taken into account as contacts are not ohmic due to some morphological disorders. Further the effect of contact resistance is included and accordingly the generic model current equation is modified. It shows a good agreement of proposed current equation with simulated results which validates the proposed OTFT model from ohmic to saturation regime. Moreover, the analytical model is used to extract the contact and channel resistances in linear and saturation region and these resistances are verified through potential cut line (PCL) and transmission line methods (TLM). The extracted parameters are not only used to verify the electrical characteristics but also exhibit insight on contact potential, charge injection and transport phenomenon for organic TFT operation.

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Parameters extraction method for organic thin film transistor model

Chinese Journal of Liquid Crystals and Displays ◽

10.3788/yjyxs20173204.0281 ◽

2017 ◽

Vol 32 (4) ◽

pp. 281-286

Author(s):

尹飞飞 YIN Fei-fei ◽

徐征 XU Zheng ◽

赵谡玲 ZHAO Su-ling ◽

乔泊 QIAO Bo ◽

张成文 ZHANG Cheng-wen ◽

...

Keyword(s):

Thin Film ◽

Extraction Method ◽

Thin Film Transistor ◽

Organic Thin Film ◽

Organic Thin Film Transistor ◽

Parameters Extraction ◽

Transistor Model

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Channel Pinchoff Near Drain in Top Contact Organic Thin-Film Transistor

IEEE Electron Device Letters ◽

10.1109/led.2015.2459379 ◽

2015 ◽

Vol 36 (9) ◽

pp. 947-949 ◽

Cited By ~ 5

Author(s):

Ashish K. Agarwal ◽

Rajesh Agarwal ◽

B. Mazhari

Keyword(s):

Thin Film ◽

Thin Film Transistor ◽

Organic Thin Film ◽

Organic Thin Film Transistor ◽

Top Contact

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An Analysis of Aluminium Oxide and Silicon Dioxide as a Dielectric on Nano Structured Bottom Gate Bottom Contact Organic Thin Film Transistor Based Sensor

International Journal for Modern Trends in Science and Technology - RTT2020 ◽

10.46501/ijmtst060807 ◽

2020 ◽

pp. 31-35

Author(s):

Rajpoot Subhadra

Keyword(s):

Thin Film ◽

Silicon Dioxide ◽

Gas Sensor ◽

Dielectric Material ◽

Thin Film Transistor ◽

Drain Current ◽

Organic Thin Film ◽

Organic Thin Film Transistor ◽

Bottom Contact ◽

Bottom Gate

A Nano-structuredflexible bottom gate bottom contact (BGBC) organic thin film transistor based pentacenesensor was utilisedto compare between the two frequently used dielectric material i.ealuminiumoxide (Al2O3) and silicon dioxide (SiO2). The organic sensor served as an excellent gas sensor which was visualised through the simulation result in the form of variation between itsmax. and min. drain current and Ion /Ioffratio. The Ion / Ioffratio in the case ofaluminiumoxidewas found to be greater as compared to silicon dioxide whereas the minimum drain current was greater in the case of silicon dioxide and vice versa for the maximum drain current. On comparing the sensitivity of the device, which is the ratio of difference between min. drain current in the presence of any toxic gas and min. drain current in the absence of air to the min. drain current in the absence of air with respect tothe twodifferent electrodes wasfound to be 0.0314 for aluminiumoxide and 0.02964 for silicon dioxide. Hence, aluminiumoxide taking upper hand in sensitivity

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