scholarly journals An Analysis of Aluminium Oxide and Silicon Dioxide as a Dielectric on Nano Structured Bottom Gate Bottom Contact Organic Thin Film Transistor Based Sensor

2020 ◽  
pp. 31-35
Author(s):  
Rajpoot Subhadra
Keyword(s):  
Thin Film ◽  
Silicon Dioxide ◽  
Gas Sensor ◽  
Dielectric Material ◽  
Thin Film Transistor ◽  
Drain Current ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Bottom Contact ◽  
Bottom Gate

A Nano-structuredflexible bottom gate bottom contact (BGBC) organic thin film transistor based pentacenesensor was utilisedto compare between the two frequently used dielectric material i.ealuminiumoxide (Al2O3) and silicon dioxide (SiO2). The organic sensor served as an excellent gas sensor which was visualised through the simulation result in the form of variation between itsmax. and min. drain current and Ion /Ioffratio. The Ion / Ioffratio in the case ofaluminiumoxidewas found to be greater as compared to silicon dioxide whereas the minimum drain current was greater in the case of silicon dioxide and vice versa for the maximum drain current. On comparing the sensitivity of the device, which is the ratio of difference between min. drain current in the presence of any toxic gas and min. drain current in the absence of air to the min. drain current in the absence of air with respect tothe twodifferent electrodes wasfound to be 0.0314 for aluminiumoxide and 0.02964 for silicon dioxide. Hence, aluminiumoxide taking upper hand in sensitivity

Modelling and Simulation Approach for Organic Thin-Film Transistors Using MATLAB Simulation

2015 ◽  
Vol 1107 ◽  
pp. 514-519
Author(s):  
Umar Faruk Shuib ◽  
Khairul Anuar Mohamad ◽  
Afishah Alias ◽  
Tamer A. Tabet ◽  
Bablu K. Gosh ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Cost ◽  
Thin Film Transistor ◽  
Drain Current ◽  
Mobility Model ◽  
Channel Length ◽  
Analytical Models ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Organic Transistor

As organic transistors are preparing to make improvements towards flexible and low cost electronics applications, the analytical models and simulation methods were demanded to predict the optimized performance and circuit design. In this paper, we investigated the analytical model of an organic transistor device and simulate the output and transfer characteristics of the device using MATLAB tools for different channel length (L) of the organic transistor. In the simulation, the Pool-Frenkel mobility model was used to represent the conductive channel of organic transistor. The different channel length has been simulated with the value of 50 μm, 10 μm and 5 μm. This research paper analyses the performance of organic thin film transistor (TFT) for top contact bottom gate device. From the simulation, drain current of organic transistor was increased as the channel length decreased. Other extraction value such sub-threshold and current on/off ratio is 0.41 V and 21.1 respectively. Thus, the simulation provides significant extraction of information about the behaviour of the organic thin film transistor.

Characteristics of pentacene organic thin film transistor with top gate and bottom contact

2008 ◽  
Vol 17 (5) ◽  
pp. 1887-1892 ◽  
Author(s):  
Yuan Guang-Cai ◽  
Xu Zheng ◽  
Zhao Su-Ling ◽  
Zhang Fu-Jun ◽  
Jiang Wei-Wei ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Bottom Contact

Effects of Device Architecture on the Performance of Organic Thin Film Transistors

2008 ◽  
Vol 1138 ◽  
Author(s):  
Xiaojing Zhou ◽  
Karyn E. Mutkins ◽  
Daniel Elkington ◽  
Kathleen Sirois ◽  
Warwick Belcher ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Drain Current ◽  
Channel Length ◽  
Device Performance ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Device Architecture ◽  
Electrochemical Transistor ◽  
The Impact

AbstractThe impact of device dimension and architecture on the device performance of an all–solution fabrication organic thin film transistor (OTFT) has been investigated. The saturation drain current is inversely proportional to the channel length, indicating that a characteristic of field–effect like transistor has been obtained. In contrast, the drain current is independent of the thickness of polyvinylphenol (PVP) dielectric layer and a large leakage current is observed at the gate electrode indicating that the device also shows electrochemical transistor characteristics. Although separate conductance measurements of a single poly(3–hexylthiophene) (P3HT) layer and a P3HT/PVP layer reveal that the conductance is proportional to the thickness of the layer, the maximum achieved drain current in the fabricated OTFT is inversely proportional to the P3HT thickness. Using this data, an interface of P3HT/PVP or a maximum P3HT thickness for a working transistor of approximately 160 ± 16 nm can be extracted. The mechanism of operation of these devices is discussed.

Electrode Effects of Organic Thin-Film Transistor with Top and Bottom Contact Configuration

2005 ◽  
Vol 44 (6A) ◽  
pp. 3715-3720 ◽  
Author(s):  
Manabu Yoshida ◽  
Sei Uemura ◽  
Satoshi Hoshino ◽  
Noriyuki Takada ◽  
Takehito Kodzasa ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Bottom Contact ◽  
Contact Configuration

PENTACENE-BASED ORGANIC THIN FILM TRANSISTOR WITH SiO2 GATE DIELECTRIC

2015 ◽  
Vol 22 (03) ◽  
pp. 1550038 ◽  
Author(s):  
AHMET DEMIR ◽  
SADIK BAĞCI ◽  
SAIT EREN SAN ◽  
ZEKERIYA DOĞRUYOL
Keyword(s):  
Thin Film ◽  
Thermal Evaporation ◽  
Gate Dielectric ◽  
Dielectric Material ◽  
Thin Film Transistor ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Thermal Evaporation Method ◽  
Threshold Voltages ◽  
Thin Film Layer

An organic thin film transistor (OTFT) based on pentacene was fabricated with SiO 2 as the gate dielectric material. We have investigated the effects of the thickness of pentacene layer and the organic semiconductor (OSC) material on OTFT devices at two different thicknesses. Au metal was deposited for gate, source and drain contacts of the device by using thermal evaporation method. Pentacene thin film layer was also prepared with thermal evaporation. Our study has shown that the change in pentacene thickness makes a noteworthy difference on the field effect mobility (μFET), values, threshold voltages (VT) and on/off current ratios (Ion/Ioff). OTFTs exhibited saturation at the order of μFET of 3.92 cm2/Vs and 0.86 cm2/Vs at different thicknesses. Ion/Ioff and VT are also thickness dependent. Ion/Ioff is 1 × 103, 2 × 102 and VT is 15 V, 27 V of 40 nm and 60 nm, respectively. The optimized thickness of the pentacene layer was found as 40 nm. The effect of the OSC layer thickness on the OTFT performance was found to be conspicuous.

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