Analysis of Oxide Voltage and Field Dependence of Time-Dependent Dielectric Soft Breakdown in Ultrathin Gate Oxides

2001 ◽  
Author(s):  
W. Mizubayashi ◽  
Y. Yoshida ◽  
S. Miyazaki ◽  
M. Hirose
Keyword(s):  
Field Dependence ◽  
Time Dependent ◽  
Gate Oxides ◽  
Soft Breakdown

Quantitative Analysis of Oxide Voltage and Field Dependence of Time-Dependent Dielectric Soft Breakdown and Hard Breakdown in Ultrathin Gate Oxides

2002 ◽  
Vol 41 (Part 1, No. 4B) ◽  
pp. 2426-2430 ◽  
Author(s):  
Wataru Mizubayashi ◽  
Yuichi Yoshida ◽  
Seiichi Miyazaki ◽  
Masataka Hirose
Keyword(s):  
Quantitative Analysis ◽  
Field Dependence ◽  
Time Dependent ◽  
Gate Oxides ◽  
Soft Breakdown

Soft breakdown current noise in ultra-thin gate oxides

2002 ◽  
Vol 46 (7) ◽  
pp. 1019-1025 ◽  
Author(s):  
A. Cester ◽  
L. Bandiera ◽  
G. Ghidini ◽  
I. Bloom ◽  
A. Paccagnella
Keyword(s):  
Current Noise ◽  
Gate Oxides ◽  
Soft Breakdown

Model for the current–voltage characteristics of ultrathin gate oxides after soft breakdown

1998 ◽  
Vol 84 (8) ◽  
pp. 4351-4355 ◽  
Author(s):  
M. Houssa ◽  
T. Nigam ◽  
P. W. Mertens ◽  
M. M. Heyns
Keyword(s):  
Gate Oxides ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Soft Breakdown

Physical analysis of hard and soft breakdown failures in ultrathin gate oxides

2002 ◽  
Vol 42 (4-5) ◽  
pp. 565-571 ◽  
Author(s):  
M.K. Radhakrishnan ◽  
K.L. Pey ◽  
C.H. Tung ◽  
W.H. Lin
Keyword(s):  
Physical Analysis ◽  
Gate Oxides ◽  
Soft Breakdown

scholarly journals Time dependent dielectric wearout (TDDW) technique for reliability of ultrathin gate oxides

1999 ◽  
Vol 20 (6) ◽  
pp. 262-264 ◽  
Author(s):  
Yider Wu ◽  
Qi Xiang ◽  
D. Bang ◽  
G. Lucovsky ◽  
Ming-Ren Lin
Keyword(s):  
Time Dependent ◽  
Gate Oxides
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