Experimental study and modeling of the temperature dependence of soft breakdown conduction in ultrathin gate oxides

2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual. ◽

10.1109/relphy.2003.1197815 ◽

2003 ◽

Author(s):

A. Avellan ◽

E. Miranda ◽

B. Sell ◽

W. Krautschneider

Keyword(s):

Experimental Study ◽

Temperature Dependence ◽

Gate Oxides ◽

Download Full-text

Model for the voltage and temperature dependence of the soft breakdown current in ultrathin gate oxides

Journal of Applied Physics ◽

10.1063/1.1827343 ◽

2005 ◽

Vol 97 (1) ◽

pp. 014104 ◽

Author(s):

A. Avellán ◽

E. Miranda ◽

D. Schroeder ◽

W. Krautschneider

Keyword(s):

Temperature Dependence ◽

Gate Oxides ◽

Download Full-text

Consistent model for the voltage and temperature dependence of the soft breakdown conduction mechanism in ultrathin gate oxides

Microelectronic Engineering ◽

10.1016/j.mee.2003.12.029 ◽

2004 ◽

Vol 72 (1-4) ◽

pp. 136-139 ◽

Author(s):

A Avellán ◽

E Miranda ◽

D Schroeder ◽

W Krautschneider

Keyword(s):

Temperature Dependence ◽

Conduction Mechanism ◽

Gate Oxides ◽

Consistent Model ◽

Download Full-text

Soft breakdown current noise in ultra-thin gate oxides

Solid-State Electronics ◽

10.1016/s0038-1101(02)00036-9 ◽

2002 ◽

Vol 46 (7) ◽

pp. 1019-1025 ◽

Author(s):

A. Cester ◽

L. Bandiera ◽

G. Ghidini ◽

I. Bloom ◽

A. Paccagnella

Keyword(s):

Current Noise ◽

Gate Oxides ◽

Download Full-text

Model for the current–voltage characteristics of ultrathin gate oxides after soft breakdown

Journal of Applied Physics ◽

10.1063/1.368654 ◽

1998 ◽

Vol 84 (8) ◽

pp. 4351-4355 ◽

Author(s):

M. Houssa ◽

T. Nigam ◽

P. W. Mertens ◽

M. M. Heyns

Keyword(s):

Gate Oxides ◽

Current Voltage ◽

Current Voltage Characteristics ◽

Download Full-text

Physical analysis of hard and soft breakdown failures in ultrathin gate oxides

Microelectronics Reliability ◽

10.1016/s0026-2714(02)00058-6 ◽

2002 ◽

Vol 42 (4-5) ◽

pp. 565-571 ◽

Author(s):

M.K. Radhakrishnan ◽

K.L. Pey ◽

C.H. Tung ◽

W.H. Lin

Keyword(s):

Physical Analysis ◽

Gate Oxides ◽

Download Full-text

Temperature dependence of liquid-liquid interfacial tension and universal critical amplitude ratio: an experimental study

Physica A Statistical Mechanics and its Applications ◽

10.1016/0378-4371(95)00432-7 ◽

1996 ◽

Vol 225 (3-4) ◽

pp. 312-322 ◽

Author(s):

T. Mainzer ◽

D. Woermann

Keyword(s):

Experimental Study ◽

Interfacial Tension ◽

Temperature Dependence ◽

Amplitude Ratio ◽

Critical Amplitude

Download Full-text

Experimental study of temperature dependence of threshold characteristics in semiconductor VCSELs based on submonolayer InGaAs QDs

Semiconductors ◽

10.1134/s1063782606100198 ◽

2006 ◽

Vol 40 (10) ◽

pp. 1232-1236 ◽

Author(s):

S. A. Blokhin ◽

A. V. Sakharov ◽

N. A. Maleev ◽

A. G. Kuz’menkov ◽

I. I. Novikov ◽

...

Keyword(s):

Experimental Study ◽

Temperature Dependence

Download Full-text

Analysis of Oxide Voltage and Field Dependence of Time-Dependent Dielectric Soft Breakdown in Ultrathin Gate Oxides

10.7567/ssdm.2001.b-4-4 ◽

2001 ◽

Author(s):

W. Mizubayashi ◽

Y. Yoshida ◽

S. Miyazaki ◽

M. Hirose

Keyword(s):

Field Dependence ◽

Time Dependent ◽

Gate Oxides ◽

Download Full-text

Statistical analysis of soft breakdown in ultrathin gate oxides

2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184) ◽

10.1109/vlsit.2001.934966 ◽

2002 ◽

Author(s):

W. Mizubayashi ◽

Y. Yoshida ◽

S. Miyazaki ◽

M. Hirose

Keyword(s):

Statistical Analysis ◽

Gate Oxides ◽

Download Full-text

Experimental study of temperature dependence of reflectivity and heat capacity of steels and alloys at continuous wave Nd:YAG laser heating

10.1117/12.271672 ◽

1997 ◽

Author(s):

Serge V. Garnov ◽

Vitali I. Konov ◽

Alexander S. Silenok ◽

Olga G. Tsarkova ◽

Vladimir N. Tokarev ◽

...

Keyword(s):

Experimental Study ◽

Heat Capacity ◽

Temperature Dependence ◽

Nd:Yag Laser ◽

Laser Heating ◽

Continuous Wave

Download Full-text