2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184)

2002 ◽

Cited By ~ 2

Author(s):

E. Josse ◽

T. Skotnicki ◽

M. Jurczak ◽

M. Paoli ◽

B. Tormen ◽

...

Keyword(s):

High Performance ◽

Cmos Process ◽

Process Flow

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A 0.13-μm SOI CMOS technology for low-power digital and RF applications

2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184) ◽

10.1109/vlsit.2001.934959 ◽

2002 ◽

Cited By ~ 14

Author(s):

N. Zamdmer ◽

A. Ray ◽

J.-O. Plouchart ◽

L. Wagner ◽

N. Fong ◽

...

Keyword(s):

Low Power ◽

Cmos Technology ◽

Rf Applications ◽

Soi Cmos

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Highly scalable sub-10F/sup 2/ 1T1C COB cell for high density FRAM

2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184) ◽

10.1109/vlsit.2001.934974 ◽

2002 ◽

Author(s):

S.Y. Lee ◽

H.H. Kim ◽

D.J. Jung ◽

Y.J. Song ◽

N.W. Jang ◽

...

Keyword(s):

High Density

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Electrical characteristics of TaSi/sub x/N/sub y/ gate electrodes for dual gate Si-CMOS devices

2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184) ◽

10.1109/vlsit.2001.934940 ◽

2002 ◽

Cited By ~ 1

Author(s):

You-Seok Suh ◽

G. Heuss ◽

Huicai Zhong ◽

Shin-Nam Hong ◽

V. Misra

Keyword(s):

Electrical Characteristics ◽

Gate Electrodes ◽

Dual Gate

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Non-uniform chip-temperature dependent signal integrity

2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184) ◽

10.1109/vlsit.2001.934991 ◽

2002 ◽

Cited By ~ 3

Author(s):

A.H. Ajami ◽

K. Banerjee ◽

M. Pedram

Keyword(s):

Signal Integrity ◽

Temperature Dependent ◽

Chip Temperature ◽

Dependent Signal

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Investigations of bulk dynamic threshold-voltage MOSFET with 65 GHz "normal-mode" f/sub t/ and 220 GHz "over-drive mode" f/sub t/ for RF applications

2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184) ◽

10.1109/vlsit.2001.934961 ◽

2002 ◽

Author(s):

Chun-Yen Chang ◽

Jiong-Guang Su ◽

Heng-Ming Hsu ◽

Shyh-Chyi Wong ◽

Tiao-Yuan Huang ◽

...

Keyword(s):

Normal Mode ◽

Threshold Voltage ◽

Dynamic Threshold ◽

Drive Mode ◽

Rf Applications

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Oxidation-resistant amorphous TaN barrier for MIM-Ta/sub 2/O/sub 5/ capacitors in giga-bit DRAMs

2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184) ◽

10.1109/vlsit.2001.934936 ◽

2002 ◽

Cited By ~ 4

Author(s):

Y. Nakamura ◽

I. Asano ◽

M. Hiratani ◽

T. Saito ◽

H. Goto

Keyword(s):

Oxidation Resistant

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Metal gate work function adjustment for future CMOS technology

2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184) ◽

10.1109/vlsit.2001.934939 ◽

2002 ◽

Cited By ~ 1

Author(s):

Qiang Lu ◽

R. Lin ◽

P. Ranade ◽

Tsu-Jae King ◽

Chenming Hu

Keyword(s):

Work Function ◽

Cmos Technology ◽

Metal Gate ◽

Gate Work Function

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W/WN/poly gate implementation for sub-130 nm vertical cell DRAM

2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184) ◽

10.1109/vlsit.2001.934932 ◽

2002 ◽

Cited By ~ 2

Author(s):

R. Malik ◽

L. Clevenger ◽

I. McStay ◽

O. Gluschenkov ◽

W. Robl ◽

...

Keyword(s):

Vertical Cell

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Carrier mobility enhancement in strained Si-on-insulator fabricated by wafer bonding

2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184) ◽

10.1109/vlsit.2001.934945 ◽

2002 ◽

Cited By ~ 9

Author(s):

L.-J. Huang ◽

J.O. Chu ◽

S. Goma ◽

C.P. D'Emic ◽

S.J. Koester ◽

...

Keyword(s):

Wafer Bonding ◽

Carrier Mobility ◽

Strained Si

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2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184)
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

High performance 40 nm vertical MOSFET within a conventional CMOS process flow

A 0.13-μm SOI CMOS technology for low-power digital and RF applications

Highly scalable sub-10F/sup 2/ 1T1C COB cell for high density FRAM

Electrical characteristics of TaSi/sub x/N/sub y/ gate electrodes for dual gate Si-CMOS devices

Non-uniform chip-temperature dependent signal integrity

Investigations of bulk dynamic threshold-voltage MOSFET with 65 GHz "normal-mode" f/sub t/ and 220 GHz "over-drive mode" f/sub t/ for RF applications

Oxidation-resistant amorphous TaN barrier for MIM-Ta/sub 2/O/sub 5/ capacitors in giga-bit DRAMs

Metal gate work function adjustment for future CMOS technology

W/WN/poly gate implementation for sub-130 nm vertical cell DRAM

Carrier mobility enhancement in strained Si-on-insulator fabricated by wafer bonding

Export Citation Format

2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

High performance 40 nm vertical MOSFET within a conventional CMOS process flow

A 0.13-μm SOI CMOS technology for low-power digital and RF applications

Highly scalable sub-10F/sup 2/ 1T1C COB cell for high density FRAM

Electrical characteristics of TaSi/sub x/N/sub y/ gate electrodes for dual gate Si-CMOS devices

Non-uniform chip-temperature dependent signal integrity

Investigations of bulk dynamic threshold-voltage MOSFET with 65 GHz "normal-mode" f/sub t/ and 220 GHz "over-drive mode" f/sub t/ for RF applications

Oxidation-resistant amorphous TaN barrier for MIM-Ta/sub 2/O/sub 5/ capacitors in giga-bit DRAMs

Metal gate work function adjustment for future CMOS technology

W/WN/poly gate implementation for sub-130 nm vertical cell DRAM

Carrier mobility enhancement in strained Si-on-insulator fabricated by wafer bonding

2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184)
Latest Publications