Impact of SiC Structural Crystal Defects on the Electrical Performance of Bipolar PN Junction Diode

Mapping Intimacies ◽

10.7567/ssdm.2002.g-6-4 ◽

2002 ◽

Author(s):

R. K. Malhan ◽

H. Nakamura ◽

S. Onda ◽

D. Nakamura ◽

K. Hara

Keyword(s):

Crystal Defects ◽

Electrical Performance ◽

Pn Junction ◽

Junction Diode ◽

Structural Crystal

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Electrical Impact of SiC Structural Crystal Defects on High Electric Field Devices

Materials Science Forum ◽

10.4028/www.scientific.net/msf.338-342.1161 ◽

2000 ◽

Vol 338-342 ◽

pp. 1161-1166 ◽

Author(s):

Philip G. Neudeck

Keyword(s):

Electric Field ◽

Crystal Defects ◽

High Electric Field ◽

Structural Crystal

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Characteristics of Si pn junction diode fabricated by sputtering epitaxy

2014 21st International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) ◽

10.1109/am-fpd.2014.6867177 ◽

2014 ◽

Author(s):

Wenchang Yeh ◽

Hsiangen Huang

Keyword(s):

Pn Junction ◽

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New evaluation method of low-k dielectric films by using a gated PN-junction diode and a field MOS transistor

2012 IEEE International Conference on Microelectronic Test Structures ◽

10.1109/icmts.2012.6190632 ◽

2012 ◽

Author(s):

Yoichi Tamaki ◽

Masaki Ito ◽

Masaru Hashino ◽

Yoshifumi Kawamoto

Keyword(s):

Evaluation Method ◽

Dielectric Films ◽

Mos Transistor ◽

Pn Junction ◽

Junction Diode ◽

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Stimulated emission at silicon bandgap energy from a nanostructured silicon PN junction diode

2004 10th International Workshop on Computational Electronics (IEEE Cat No 04EX915) GROUP4-04 ◽

10.1109/group4.2004.1416634 ◽

2005 ◽

Author(s):

M.J. Chen ◽

C.S. Tsai

Keyword(s):

Stimulated Emission ◽

Bandgap Energy ◽

Nanostructured Silicon ◽

Pn Junction ◽

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An α-detector system with an exchangeable ion implanted n-Sipn-junction diode

Nuclear Instruments and Methods in Physics Research ◽

10.1016/0167-5087(82)90104-1 ◽

1982 ◽

Vol 204 (1) ◽

pp. 249-250

Author(s):

Ch. Lierse ◽

J.I. Kim ◽

J. Kemmer

Keyword(s):

Detector System ◽

Pn Junction ◽

Junction Diode ◽

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A full dynamic model for pn-junction diode switching transients

IEEE Transactions on Electron Devices ◽

10.1109/16.381996 ◽

1995 ◽

Vol 42 (5) ◽

pp. 969-976 ◽

Author(s):

R.B. Darling

Keyword(s):

Dynamic Model ◽

Pn Junction ◽

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Surface recombination in GaAs PN junction diode

Journal of Applied Physics ◽

10.1063/1.353998 ◽

1993 ◽

Vol 73 (11) ◽

pp. 7509-7514 ◽

Author(s):

B. Mazhari ◽

H. Morkoç

Keyword(s):

Surface Recombination ◽

Pn Junction ◽

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Forward voltage drop across a PN junction diode at high current densities †

International Journal of Electronics ◽

10.1080/00207217108938263 ◽

1971 ◽

Vol 31 (6) ◽

pp. 649-659

Author(s):

A. BAR-LEV

Keyword(s):

Voltage Drop ◽

High Current ◽

Forward Voltage ◽

Pn Junction ◽

Forward Voltage Drop ◽

Current Densities ◽

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Modelling transient voltage overshoot of a forward biased pn-junction diode with intrinsic doped region

2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) ◽

10.23919/eos/esd.2018.8509760 ◽

2018 ◽

Author(s):

Steffen Holland ◽

Guido Notermans ◽

Hans-Martin Ritter

Keyword(s):

Pn Junction ◽

Junction Diode ◽

Transient Voltage

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Quantitative characterization of spatial complex behavior in a time-delayed twin-pn junction diode electromagnetic system with distortionless transmission line

2012 IEEE International Conference on Computer Science and Automation Engineering (CSAE) ◽

10.1109/csae.2012.6272948 ◽

2012 ◽

Author(s):

Lingtao Wang ◽

Niansheng Li

Keyword(s):

Transmission Line ◽

Complex Behavior ◽

Quantitative Characterization ◽

Electromagnetic System ◽

Pn Junction ◽

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